MIXA225PF1200TSF

MIXA225PF1200TSF preliminary XPT IGBT Module VCES = 2x 1200 V I C25 = 360 A VCE(sat) = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA225PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● Temperature sense included ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Pumps, Fans ● Air-conditioning system ● Inverter and power supplies ● UPS ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121102b MIXA225PF1200TSF preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage I C = 225 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V 9 mA; VGE = VCE V 6.5 V 0.3 mA TVJ = 25°C 1.8 t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.9 TVJ = 125 °C VGE = ±15 V; R G = 3.3 Ω VCE = 900 V; VGE = ±15 V R G = 3.3 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink µA 690 nC 60 ns 70 ns 280 ns 310 ns 20 mJ 27 mJ TVJ = 125 °C VCEmax = 1200 V short circuit current mA 0.3 1.5 600 V; IC = 225 A short circuit duration V 2.1 5.4 TVJ = 25°C VCE = 600 V; VGE = 15 V; IC = 225 A t SC A 2.1 TVJ = 25°C VGE = ±20 V VCEmax = 1200 V V A total gate charge short circuit safe operating area ±30 360 W gate emitter leakage current SCSOA V 250 Q G(on) VGE = ±15 V; R G = 3.3 Ω ±20 1100 I GES VCE = Unit V TC = 25°C TVJ = 125 °C inductive load max. 1200 TC = 80 °C TVJ = 125 °C I CM typ. TVJ = 125 °C 500 A 10 µs A 900 0.115 K/W K/W 0.05 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 265 A TC = 80 °C 185 A TVJ = 25°C 2.10 V * mA I F 80 VF forward voltage I F = 225 A IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved TVJ = 25°C * mA 32 µC 250 A TVJ = 125°C VR = 600 V -di F /dt = 3300 A/µs IF = 225 A; VGE = 0 V TVJ = 125°C V 1.70 340 ns 11.7 mJ 0.145 K/W 0.05 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20121102b MIXA225PF1200TSF preliminary Package Ratings SimBus F Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature -40 125 °C T VJ virtual junction temperature -40 150 °C Weight mounting torque MT terminal torque d Spb/Apb VISOL XXX XX-XXXXX UL Part number Ordering Standard 6 3 6 Nm Nm mm terminal to backside 10.0 mm 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Data Matrix Logo 3 2500 V 0.65 V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF resistance pin to chip g 12.7 t = 1 second t = 1 minute Unit A terminal to terminal creepage distance on surface | striking distance through air isolation voltage R pin-chip max. 350 MD d Spp/App typ. mΩ Part number M I X A 225 PF 1200 T SF YYWWx Date Code Location Part Number MIXA225PF1200TSF = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Phase leg + free wheeling Diodes Reverse Voltage [V] Thermistor \ Temperature sensor SimBus F Marking on Product MIXA225PF1200TSF Delivery Mode Box Quantity 3 Code No. 512257 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150 °C * on die level IGBT Diode 102 0 V 0 max threshold voltage 1.1 1.19 V R 0 max slope resistance * 6 8.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20121102b MIXA225PF1200TSF preliminary Outlines SimBus F 9 0,46 0 3,75 65 87 4 R2,5 50 22 57,5 10 62 0,8 11,06 7,25 0 7,75 37,73 33,92 87,26 64,4 60,59 17 20,5 1,2 3 11 12 57,96 94,5 110 122 137 152 5 2 1 8 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 9 4 3 6 7 10/11 Data according to IEC 60747and per semiconductor unless otherwise specified 20121102b MIXA225PF1200TSF preliminary IGBT 450 450 VGE = 15 V 400 350 350 300 300 TVJ = 25°C 200 [A] TVJ = 125°C 150 400 11 V 300 TVJ = 125°C IC 250 IC 250 [A] 13 V VGE = 15 V 17 V 19 V 400 IC 200 200 [A] 150 100 100 50 50 0 9V TVJ = 125°C 100 TVJ = 25°C 0 0 1 2 3 0 0 1 2 VCE [V] 3 4 5 6 7 8 20 50 IC = 225 A VCE = 600 V 125 15 VGE E 50 t td(on) [mJ] 20 75 500 E t 400 [ns] [mJ] [ns] 30 300 td(off) 20 Eon 10 600 40 50 5 700 60 10 [V] 12 RG = 3.3 VCE = 600 V VGE = ±15 V TVJ = 125°C 100 30 11 70 tr RG = 3.3 VCE = 600 V VGE = ±15 V TVJ = 125°C 40 10 Fig. 3 Typ. transfer characteristics Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 9 VGE [V] VCE [V] 200 tf 25 10 0 Erec(off) 0 0 200 400 600 800 0 100 200 300 0 500 400 100 Eoff 0 0 100 200 300 0 500 400 QG [nC] IC [A] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus collector current 0.12 30 0.10 150 IC = 225 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff t E 0.06 Eon 20 100 [mJ] [K/W] 600 td(on) 0.08 ZthJC 30 tr 0.04 [ns] IC = 225 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff 20 t t d(off) 400 [mJ] [ns] tf 0.02 0.00 0.001 10 0.01 0.1 1 10 Erec(on) 4 50 6 8 10 10 200 4 6 8 10 t [s] RG [ ] RG [ ] Fig. 7 Typical transient thermal impedance junction to case Fig. 8 Typ. switching energy versus gate resistance Fig. 9 Typ. switching energy versus gate resistance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121102b MIXA225PF1200TSF preliminary Diode 250 440 IF = 225 A VR = 600 V TVJ = 125°C 400 240 300 420 230 220 380 6.8 [A] 6.8 trr 200 [A] 10 400 5.0 Irr IF IF = 225 A VR = 600 V TVJ = 125°C 3.3 5.0 [ns] 210 360 TVJ = 125°C 100 200 TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 190 2600 3.0 3.3 340 10 2800 3000 3200 320 2600 3400 diF /dt [A/μs] VF [V] 60 3000 3200 3400 diF /dt [A/μs] Fig. 3 Typ. reverse recovery characteristics Fig. 2 Typ. reverse recovery characteristics Fig. 1 Typ. forward current versus VF 2800 300 12.0 250 11.5 VR = 600 V 50 RG = 3.3 TVJ = 125°C 40 Qrr Erec Irr 30 11.0 200 [μC] [A] 20 VR = 600 V RG = 3.3 TVJ = 125°C 150 10 0 [mJ] 100 0 100 200 300 400 500 0 100 200 IF [A] 300 400 500 10.0 2600 2800 3000 3200 3400 diF /dt [A/μs] IF [A] Fig. 4 Typ. reverse recovery characteristics IF = 225 A VR = 600 V TVJ = 125°C 10.5 Fig. 6 Typ. recovery energy Erec versus diF /dt Fig. 3 Typ. reverse recovery characteristics 0.16 0.12 ZthJC 0.08 single pulse [K/W] 0.04 0.00 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121102b