MIXA300PF1200TSF

MIXA300PF1200TSF tentative XPT IGBT Module VCES = 2x 1200 V I C25 = 465 A VCE(sat) = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA300PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● Temperature sense included ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Pumps, Fans ● Air-conditioning system ● Inverter and power supplies ● UPS ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121105 MIXA300PF1200TSF tentative Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 V 6.5 V 0.3 mA I C = 12 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.8 TVJ = 125 °C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 300 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.4 5.9 TVJ = 125 °C VGE = ±15 V; R G = 2.2 Ω VCE = 900 V; VGE = ±15 V R G = 2.2 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink µA 885 nC 110 ns 68 ns 290 ns 345 ns 20 mJ 42 mJ TVJ = 125 °C VCEmax = 1200 V short circuit current mA 0.3 1.5 600 V; IC = 300 A short circuit duration V 2.15 TVJ = 125 °C t SC A 2.1 gate emitter threshold voltage VCEmax = 1200 V V A VGE(th) short circuit safe operating area ±30 465 W I C = 300 A; VGE = 15 V SCSOA V 325 collector emitter saturation voltage VGE = ±15 V; R G = 2.2 Ω ±20 1500 VCE(sat) VCE = Unit V TC = 25°C total power dissipation inductive load max. 1200 TC = 80 °C Ptot I CM typ. TVJ = 125 °C 650 A 10 µs A tbd 0.085 K/W K/W 0.04 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 265 A TC = 80 °C 185 A TVJ = 25°C 2.20 V * mA I F 80 VF forward voltage I F = 300 A IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved TVJ = 25°C * mA 38 µC 300 A TVJ = 125°C VR = 600 V -di F /dt = 4500 A/µs IF = 300 A; VGE = 0 V TVJ = 125°C V 1.90 350 ns 15 mJ 0.145 K/W 0.05 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20121105 MIXA300PF1200TSF tentative Package Ratings SimBus F Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature -40 125 °C T VJ virtual junction temperature -40 150 °C Weight mounting torque MT terminal torque d Spb/Apb VISOL Unit A XXX XX-XXXXX Part number Ordering Standard 3 6 Nm Nm mm terminal to backside 10.0 mm 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Data Matrix UL 6 2500 V 0.65 V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF resistance pin to chip Logo 3 12.7 t = 1 second t = 1 minute g terminal to terminal creepage distance on surface | striking distance through air isolation voltage R pin-chip max. 350 MD d Spp/App typ. mΩ Part number M I X A 300 PF 1200 T SF YYWWx Date Code Location Part Number MIXA300PF1200TSF = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Phase leg + free wheeling Diodes Reverse Voltage [V] Thermistor \ Temperature sensor SimBus F Marking on Product MIXA300PF1200TSF Delivery Mode Box Quantity 3 Code No. 512264 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150 °C * on die level IGBT Diode 102 0 V 0 max threshold voltage 1.1 1.25 V R 0 max slope resistance * 4.6 8.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20121105 MIXA300PF1200TSF tentative Outlines SimBus F 9 0,46 0 3,75 65 87 4 R2,5 50 22 57,5 10 62 0,8 11,06 7,25 0 7,75 37,73 33,92 87,26 64,4 60,59 17 20,5 1,2 3 11 12 57,96 94,5 110 122 137 152 5 2 1 8 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 9 4 3 6 7 10/11 Data according to IEC 60747and per semiconductor unless otherwise specified 20121105 MIXA300PF1200TSF tentative IGBT 600 600 500 500 400 400 IC 11 V 500 400 IC TVJ = 25°C 300 600 13 V VGE = 15 V 17 V 19 V VGE = 15 V IC 300 [A] [A] TVJ = 125°C 200 300 [A] 9V 200 200 TVJ = 125°C TVJ = 125°C 100 100 100 TVJ = 25°C 0 0 0 1 2 3 0 0 4 1 2 3 4 5 5 6 7 Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 70 20 175 RG = 2.2 VCE = 600 V 60 VGE = ±15 V 50 TVJ = 125°C IC = 100 A VCE = 600 V 15 125 td(on) 75t [mJ] 30 tf [ns] Eon 20 5 10 11 12 13 80 800 IC = 300 A VCE = 600 V VGE = ±15 V TVJ = 125°C 60 600 t 100 10 [V] 9 Fig. 3 Typ. transfer characteristics 150 E 40 VGE 8 VGE [V] VCE [V] VCE [V] 50 Erec(off) 10 40 400 [mJ] [ns] td(off) 20 200 tr 25 Eoff 0 0 0 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 0 0 100 200 300 400 500 600 IC [A] QG [nC] 60 0.10 300 IC = 300 A VCE = 600 V VGE = ±15 V TVJ = 125°C 50 0.08 0.06 IC [A] single pulse 40 200 30 t 150 [ns] Eon tr 20 0.02 100 800 IC = 300 A VCE = 600 V VGE = ±15 V TVJ = 125°C 30 t 600 [ns] [mJ] 20 Erec(off) 10 1000 250 td(on) 40 [mJ] 0.04 50 td(off) E ZthJC Fig. 6 Typ. switching energy versus gate resistance Fig. 5 Typ. turn-on energy & switching times vs. collector current, inductive switching Fig. 4 Typ. turn-on gate charge [K/W] 0 400 tr 50 Eoff 0.00 0.001 0 0.01 0.1 1 0 10 6 8 10 200 0 2 4 6 8 10 12 14 16 RG [ ] Fig. 8 Typ. turn-on energy, switching times vs. gate resistor, inductive switching Fig.9 Typ. turn-off energy, switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 4 RG [ ] t [s] Fig. 7 Typ. trans. therm. impedance 2 0 10 12 14 16 Data according to IEC 60747and per semiconductor unless otherwise specified 20121105 MIXA300PF1200TSF tentative Diode 600 400 500 400 IF 400 Rg = 2.2 VR = 600 V TVJ = 125°C If = 300 A VR = 600 V TVJ = 125°C 2.2 300 300 4.7 Irr 300 Irr 10 [A] [A] 200 200 TJ = 125°C 100 [A] 200 15 TJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 2500 100 3000 VF [V] 3500 4000 4500 Fig. 2 Typ. reverse recovery characteristics Fig. 1 Typ. Forward current versus VF 60 0 100 200 300 400 500 600 IF [A] diF /dt [A/μs] Fig. 3 Typ. reverse recovery characteristics 600 Rg = 2.2 VR = 600 V TVJ = 125°C If = 300 A VR = 600 V TVJ = 125°C 15 40 500 10 Qrr trr [A] [A] 20 4.7 400 2.2 0 0 300 2500 100 200 300 400 500 600 IF [A] 3000 3500 4000 4500 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. reverse recovery characteristics Fig. 6 Typ. recovery energy Erec versus -di/dt 0.16 0.12 ZthJC single pulse 0.08 [K/W] 0.04 0.00 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121105