MIXA600PF650TSF

MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE(sat) = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● Temperature sense included ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Pumps, Fans ● Air-conditioning system ● Inverter and power supplies ● UPS ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121107 MIXA600PF650TSF tentative Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = typ. 25°C TC = 25°C I C80 1.8 V 5.5 V 1.8 mA gate emitter threshold voltage I C = 9.6 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.65 4 4.8 gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 300 V; VGE = 15 V; IC = 600 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 1.5 inductive load TVJ = 150 °C 300 V; IC = 600 A VGE = ±15 V; R G = 1.3 Ω VGE = ±15 V; R G = 1.3 Ω short circuit safe operating area VCEmax = 650 V t SC short circuit duration VCE = 360 V; VGE = ±15 V R G = 1.3 Ω; non-repetitive µA 840 nC 30 ns 50 ns 100 ns 40 ns 6 mJ 22.8 mJ TVJ = 150 °C VCEmax = 650 V SCSOA thermal resistance case to heatsink mA 2 TVJ = 150 °C I GES V 1.85 TVJ = 150 °C R thCH A A VGE(th) thermal resistance junction to case V W I C = 600 A; VGE = 15 V I SC ±30 720 490 collector emitter saturation voltage R thJC V 1750 VCE(sat) short circuit current ±20 TC = 25°C total power dissipation I CM Unit V TC = 80 °C Ptot VCE = max. 650 TVJ = 150 °C 1200 A 10 µs A 2400 0.085 K/W K/W 0.05 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 650 V I F25 forward current TC = 25°C 490 A TC = 80 °C 340 A TVJ = 25°C 1.90 V * mA I F 80 VF forward voltage I F = 600 A IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved * mA tbd µC tbd A TVJ = 125°C VR = 300 V -di F /dt = 0 A/µs IF = 600 A; VGE = 0 V TVJ = 125°C V 1.70 tbd ns tbd mJ 0.095 K/W 0.04 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20121107 MIXA600PF650TSF tentative Package Ratings SimBus F Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature -40 125 °C T VJ virtual junction temperature -40 175 °C Weight mounting torque MT terminal torque d Spb/Apb VISOL Unit A XXX XX-XXXXX Part number Ordering Standard 3 6 Nm Nm mm terminal to backside 10.0 mm 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Data Matrix UL 6 2500 V 0.65 V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF resistance pin to chip Logo 3 12.7 t = 1 second t = 1 minute g terminal to terminal creepage distance on surface | striking distance through air isolation voltage R pin-chip max. 350 MD d Spp/App typ. mΩ Part number M I X A 600 PF 650 T SF YYWWx Date Code Location Part Number MIXA600PF650TSF = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Phase leg + free wheeling Diodes Reverse Voltage [V] Thermistor \ Temperature sensor SimBus F Marking on Product MIXA600PF650TSF Delivery Mode Box Quantity 3 Code No. 513794 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 175 °C * on die level IGBT Diode 102 0 V 0 max threshold voltage 1.1 1.21 R 0 max slope resistance * 1.8 1 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20121107 MIXA600PF650TSF tentative Outlines SimBus F 9 0,46 0 3,75 65 87 4 R2,5 50 22 57,5 10 62 0,8 11,06 7,25 0 7,75 37,73 33,92 87,26 64,4 60,59 17 20,5 1,2 3 11 12 57,96 94,5 110 122 137 152 5 2 1 8 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 9 4 3 6 7 10/11 Data according to IEC 60747and per semiconductor unless otherwise specified 20121107