MIXA60HU1200VA

MIXA60HU1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 85 A VCE(sat) = 1.8 V H~ Bridge, Buck / Boost - Combination Part number MIXA60HU1200VA Backside: isolated 10 6 4 5 8 3 1 2 9 7 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● Switched-mode power supplies ● Switched reluctance motor drive ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c MIXA60HU1200VA preliminary Ratings IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current TC = 25°C TC = 80 °C 60 A TC = 25°C 290 W 2.1 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 55 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C 1.8 TVJ = 25°C 5.4 5.9 TVJ = 25°C TVJ = 125 °C ±20 V ±30 V 85 A V 6.5 0.5 0.2 gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area inductive load 55 A TVJ = 125 °C 55 A VGE = ±15 V; R G = 15 Ω VGE = ±15 V; R G = 15 Ω short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 15 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink mA nA 165 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA V mA 500 I GES I CM max. Unit 1200 V 2.1 TVJ = 125 °C VCE = 600 V; IC = typ. 25°C TVJ = 125 °C 150 A 10 µs A 200 0.5 K/W K/W 0.30 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 forward current TC = 25°C 88 A TC = 80 °C 59 A TVJ = 25°C 2.20 V 0.3 mA IF 80 VF forward voltage IF = IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A TVJ = 125 °C TVJ = 25°C TVJ = 125 °C VR = 600 V -di F /dt = 1200 A/µs IF = 60 A; VGE = 0 V TVJ = 125 °C 1.95 V 1.2 mA 8 µC 60 A 350 ns 2.5 mJ 0.6 K/W 0.2 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20200729c MIXA60HU1200VA preliminary Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App Date Code Prod. Index M I X A 60 HU 1200 VA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Number MIXA60HU1200VA Equivalent Circuits for Simulation I V0 terminal to backside 12.0 mm 3600 V 3000 V Part description yywwA Ordering Standard R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] H~ Bridge, Buck / Boost - Combination Reverse Voltage [V] V1-A-Pack Marking on Product MIXA60HU1200VA Delivery Mode Blister IGBT Diode threshold voltage 1.1 1.22 R0 max slope resistance * 25.1 13 © 2020 IXYS all rights reserved Quantity 24 Code No. 518854 T VJ = 150°C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Nm mm 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 2.5 6.0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c MIXA60HU1200VA preliminary 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) *7 *0 *7 *14 5,5 *14 Ø 6,1 Ø 2,5 1,5 12,2 11,75 ±0,3 = 11,75 ±0,3 = 1x45° 3 4 5 8 9 10 15 6 2 7 4 1 6 *11 5,5 *0 Ø 2,1 *11 6 0,5 *14 *7 25 *0 *7 *14 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 1 ±0,2 ±0,3 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm   10 2 +0,2 6 4 5 8 3 1 2 9 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c MIXA60HU1200VA preliminary IGBT 100 100 TVJ = 125°C 25°C 80 100 80 IC 60 IC 60 [A] 40 [A] 40 20 20 13 V VGE = 15 V 17 V 19 V 11 V 80 IC 60 9V [A] 40 20 TVJ = 125°C 0 0 0 1 2 TVJ = 25°C 0 0 3 TVJ = 125°C 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE [V] VCE [V] VGE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics 10 20 IC = 50 A VCE = 600 V 8 15 VGE E 6.0 Eon RG = 15 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff Eoff 5.5 6 E 10 5.0 [mJ] 4 [V] 5 [mJ] 4.5 2 0 0 0 50 100 150 4.0 0 200 20 40 60 80 100 120 IC [A] QG [nC] 12 16 20 24 28 32 RG [Ohm] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c MIXA60HU1200VA preliminary Diode 120 14 TVJ = 125°C 25°C 100 90 TVJ = 125°C VR = 600 V 12 80 IC 10 120A 70 8 60 A IRR 60 Qrr 60 [A] TVJ = 125°C VR = 600 V 80 120A 60 A 30 A [A] 50 [μC] 6 40 30 A 40 4 20 30 2 0 0 1 2 3 600 800 1000 20 600 1200 -diF /dt [A/μs] VCE [V] 1200 Fig. 3 Typ. peak reverse current IRM versus di/dt 700 4.0 TVJ = 125°C VR = 600 V TVJ = 125°C VR = 600 V 600 trr 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recovery charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 800 120A 3.2 500 Erec [ns] 400 120A 60 A 2.4 30 A [mJ] 1.6 60 A 300 0.8 30 A 200 600 800 1000 0.0 600 1200 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 800 1000 1200 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec versus -di/dt 1 ZthJC 0.1 [K/W] Ri ti [K/W] [s] 1 2 3 4 0.01 0.001 0.01 0.1 1 0.137 0.1 0.233 0.13 0.0025 0.03 0.03 0.08 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c