MIXA80R1200VA

MIXA80R1200VA XPT IGBT Module VCES = 1200 V I C25 = 120 A VCE(sat) = 1,9 V Boost Chopper Part number MIXA80R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102c MIXA80R1200VA Ratings IGBT Symbol VCES Definition VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = collector emitter voltage TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage typ. 25°C IC = 75 A; VGE = 15 V gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V ±30 V 120 A 84 A 390 W 2,2 V TVJ = 25°C 1,9 = 125 °C TVJ = 25°C V 2,2 5,4 5,9 6,5 0,2 0,6 VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area inductive load 75 A TVJ = 125 °C 75 A VGE = ±15 V; R G = 10 Ω VGE = ±15 V; R G = 10 Ω short circuit safe operating area VCEma = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 10 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink mA nA 230 nC 70 ns 40 ns 250 ns 100 ns 6,8 mJ 8,3 mJ TVJ = 125 °C VCEma = 1200 V SCSOA V mA 500 gate emitter leakage current I CM V TC = 25°C TVJ = 25°C TVJ = 125 °C I GES VCE = 600 V; IC = ±20 TC = 80 °C TVJ 6 mA; VGE = VCE VGE(th) max. Unit 1200 V TVJ = 125 °C 225 A 10 µs A 300 0,32 K/W K/W 0,20 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 forward current TC = 25°C 135 A TC = 80 °C 90 A TVJ = 25°C 2,30 V 0,3 mA IF 80 VF forward voltage I F = 100 A IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved VR = 600 V -di F /dt = 1600 A/µs IF = 100 A; VGE = 0 V 2,10 TVJ = 25°C TVJ = 125°C V 0,8 mA 12,5 µC 105 A 350 ns 4 mJ 0,4 K/W 0,20 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20151102c MIXA80R1200VA Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App Date Code Prod. Index M I X A 80 R 1200 VA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Number MIXA80R1200VA Equivalent Circuits for Simulation I V0 terminal to backside 12,0 mm 3600 V 3000 V Part description yywwA Ordering Standard R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Boost Chopper Reverse Voltage [V] V1-A-Pack Marking on Product MIXA80R1200VA Delivery Mode Blister IGBT Diode threshold voltage 1,1 1,09 V R0 max slope resistance * 17,9 9,1 mΩ © 2015 IXYS all rights reserved Quantity 24 Code No. 510585 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Nm mm 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 2,5 6,0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Data according to IEC 60747and per semiconductor unless otherwise specified 20151102c MIXA80R1200VA 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) = *0 2 3 *7 *14 15 4 5 6 4 *11 8 *7 *0 Ø 2,1 10 7 *14 9 6 *0 5,5 Ø 2,5 1,5 *7 5,5 *14 1 12,2 11,75 ±0,3 Ø 6,1 11,75 ±0,3 = 1x45° *11 6 0,5 Marking on product Aufdruck der Typenbezeichnung *7 *14 25 * 25,75 ±0,3 1 ±0,2 25 Ø 0,8 25,75 ±0,3 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 6/7 2 +0,2 1/2 9 10 4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102c MIXA80R1200VA IGBT 140 IC [A] 120 120 100 100 60 IC 80 TVJ = 125°C [A] 40 20 20 1.0 1.5 2.0 2.5 3.0 9V 60 40 0.5 11 V VGE = 15 V 17 V 19 V TVJ = 125°C TVJ = 25°C 80 0 0.0 13 V 140 VGE = 15 V 0 0.0 3.5 0.5 1.0 1.5 2.0 VCE [V] 2.5 3.0 3.5 4.0 4.5 VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 140 IC = 75 A VCE = 600 V 120 15 100 80 VGE [A] 60 [V] IC 40 10 5 TVJ = 125°C 20 TVJ = 25°C 0 0 5 6 7 8 9 10 11 12 0 13 50 100 150 16 9 10 E 300 10 RG = 10 VCE = 600 V VGE = ±15 V TVJ = 125°C 12 250 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 14 200 QG [nC] VGE [V] Eoff 8 E 8 [mJ] 6 [mJ] 4 Eoff 7 Eon IC = 75 A VCE = 600 V VGE = ±15 V TVJ = 125°C 6 Eon 2 0 0 20 40 60 80 100 120 140 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 5 8 10 12 14 16 18 20 22 24 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20151102c MIXA80R1200VA Diode 200 24 TVJ = 125°C VR = 600 V 20 200 A 150 Qrr 16 IF 100 [A] 100 A [µC] 12 TVJ = 125°C 50 TVJ = 25°C 0 0.0 0.5 50 A 8 1.0 1.5 2.0 2.5 4 1000 3.0 1200 1400 VF [V] 1600 1800 2000 2200 diF /dt [A/µs] Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 160 700 TVJ = 125°C 140 200 A TVJ = 125°C 600 VR = 600 V VR = 600 V 500 100 A 120 IRR trr 50 A 200 A 400 100 [A] [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 diF /dt [A/µs] 1600 1800 2000 2200 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 8 1 200 A TVJ = 125°C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A [K/W] 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20151102c