MKE38RK600DFELB-TRR

MKE 38RK600DFELB CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 50 A RDS(on) max = 45 mW ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device Preliminary data K D D T D G KS Iso S A Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C VGS ID25 ID80 TC = 25°C TC = 80°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25°C 600 V ±20 V 50 38 A A 1950 3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon ID = 44 A; VGS = 10 V VGS(th) ID = 3 mA; VDS = VGS IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS VDS = 0 V; VGS = ± 20 V 2.5 typ. max. 40 45 mΩ 3 3.5 V 10 µA µA 50 100 nA Inductive switching boost mode with diode D VDS = 380 V; ID = 30 A VGS = 10 V; RG = 33 Ω 80 40 750 40 1.3 0.45 0.35 ns ns ns ns mJ mJ mJ Ciss Coss VGS = 0 V; VDS = 100 V; f = 1 MHz 6800 320 pF pF Qg Qgs Qgd VDS = 400 V; ID = 44 A VGS = 10 V; RG = 3.3 Ω 150 35 50 with heatsink compound (IXYS test setup) tbd RthJC RthJH K 3x S S GK nc E72873 Features MOSFET T td(on) tr td(off) tf Eon Eoff Erec la to ted he su at rfa sin ce k A 190 nC nC nC 0.4 tbd K/W K/W • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Package - isolated surface to heatsink - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications • Buck / boost chopper • Optimized for boost configuration • PFC stage 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20111102a © 2011 IXYS All rights reserved 1-6 MKE 38RK600DFELB Source-Drain Diode of MOSFET T Symbol Conditions IS25 IS80 TC = 25°C TC = 80°C Symbol Conditions VSD trr QRM IRM Equivalent Circuits for Simulation Maximum Ratings 50 38 A A Conduction Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IF = 44 A; VGS = 0 V 0.9 IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V 600 17 60 1.0 V ns µC A I V0 R0 Boost Diode (typ. at TJ = 125°C) V0 = tbd V; R0 = tbd mW Diode D Symbol Conditions IF25 IF80 TC = 25°C; DC TC = 80°C; DC Maximum Ratings Symbol Conditions VRRM TVJ = 25°C VF IF = 25 A TVJ = 25°C TVJ = 125°C 1.2 1.3 IR VR = VRRM TVJ = 25°C TVJ = 125°C IRM IF = 30 A; VR = 350 V -di/dt = 240 A/µs trr IF = 1 A; VR = 30 V -di/dt = 100 A/µs RthJC RthJH per diode with heatsink compound (IXYS test setup) 96 61 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 600 V 1.4 V 150 tbd µA mA TVJ = 100°C 10 A TVJ = 100°C 35 50 ns 0.7 K/W k/W tbd Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force Symbol Conditions CP coupling capacity between shorted pins and backside metal dS, dA dS, dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 40 ... 130 N Characteristic Values min. CTI typ. max. 90 1.65 4 pF mm mm 400 Weight 8 Ordering Part Number Standard MKE38RK600DFELB-TRR MKE38RK600DFELB g Marking on Product Delivering Mode Base Qty Ordering Code MKE38RK600DFELB Tape & Reel 200 510479 MKE38RK600DFELB Blister 45 510231 20111102a © 2011 IXYS All rights reserved 2-6 MKE 38RK600DFELB 2) 5,5 0,1 (6x) 1 0,05 0,3 0,1 2° 25 0,2 A (8 : 1) 1) 18 0,1 seating plane (3x) 2 0,05 4 0,05 0,55 0,1 32,7 0,5 23 0,2 2 0,2 9 0,1 2) 4,85 0,2 0,5 0,1  0,1 A 3)  0,05 2,75 0,1 5,5 0,1 13,5 0,1 16,25 0,1 19 0,1 ~ ~ Backside DCB Part number Date code Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (galv.) cutting edges may be partially free of plating ~ UL Logo XXXXXXXXXX yywwA Data Matrix Code Pin 1 identifier © 2011 IXYS All rights reserved The Data Matrix Code contains the following information in 36 digits: Digits 1 through 20: part number 21 to 25: date code (YYWWA) 26 to 31: assembly lot code 32: reserved for special information 33 to 36: may be used for subsequent module numbering within the assembly lot 20111102a 3-6 MKE 38RK600DFELB 1.2 320 IDSS = 0.25 mA 280 240 1.1 VDSS ID 1.0 [A] [V] 200 160 120 80 0.9 40 0.8 -60 -40 -20 0 0 20 40 60 80 100 120 140 160 0 1 2 3 7 8 9 10 VGS = 20/10/8/7 V TJ = 150°C 120 100 TJ = 25°C [A] 6 140 VGS = 20/10/8/7 V 160 ID 5 Fig. 2 Typ. transfer characteristics Fig.1 Drain source breakdown voltage versus temperature TVJ 200 4 VGS [V] TJ [°C] 120 6V ID 6V 80 [A] 60 80 5V 5.5 V 40 5V 20 4.5V 40 4.5 V 0 0 4 8 12 16 0 20 0 4 Fig. 3 Typical output characteristics 12 16 2.5 VGS = 10 V ID = 44 A 5.5 V 5V VGS = 4.5 V 2.0 80 RDSon 98% RDSon typ. 60 1.5 6V 7V 8V 10 V 20 V normalized [mΩ] 1.0 40 0.5 20 0 -60 -40 -20 0 20 Fig. 4 Typical output characteristics 120 100 8 VDS [V] VDS [V] 20 40 60 80 100 120 140 160 TVJ [°C] Fig.5 Drain source on-state resistance RDS(on) vs. junction temperature TVJ 0.0 TVJ = 125°C 0 25 50 75 100 125 ID [A] Fig. 6 Drain source on-state resistance, RDS(on) versus ID 20111102a © 2011 IXYS All rights reserved 4-6 MKE 38RK600DFELB 100 10 ID = 44 A pulsed 90 8 VGS 6 [V] 4 80 VDS = 120 V 70 400 V C 60 50 [pF] 40 30 20 2 10 0 0 50 100 0 150 0 20 40 QG [nC] 3.0 2.0 Eon 1.2 td(on) 60 tr [mJ] [ns] 1.0 Eoff [mJ] 0.6 40 0 10 20 30 40 50 ID [A] 0 70 60 0.0 [mJ] td(on) Eon tf 0 10 20 30 40 50 60 100 0 70 1.6 160 120 tr 0.8 0.4 200 Eoff Fig. 10 Typ. turn-off energy and switching times vs. collector-current, induktive switching 200 VDS = 380 V VGS = 10 V 1.6 TVJ = 125°C 1.2 t 500 [ns] 400 ID [A] 2.0 I = 30 A D Erec 600 300 0.3 20 Eon Erec td (off) 700 RG = 33 Ω VDS = 380 V VGS = 10 V TVJ = 125°C 0.9 Fig. 9 Typ. turn-on energy and switching times vs. collector current, induktive switching Eon, 800 80 1.5 0.0 1000 900 100 t 0.5 100 120 140 160 1.5 120 2.5 80 VDS [V] Fig. 8 Typ. capacities, MOSFET only Fig. 7 Typ. turn-on gate charge RG = 33 Ω VDS = 380 V VGS = 10 V TVJ = 125°C 60 1.2 t [ns] 80 40 Erec 1600 Eoff td(off) ID = 30 A VDS = 380 V VGS = 10 V TVJ = 125°C 1200 t 0.8 800 [ns] [mJ] 0.4 Eoff 400 tf 0.0 30 35 40 45 50 55 60 65 0 70 RG [Ω] Fig. 11 Typ. turn-on energy and switching times vs. gate resistor, induktive switching 0.0 30 40 50 60 0 70 RG [Ω] Fig. 12 Typ. turn-off energy and switching times vs. gate resistor, induktive switching 20111102a © 2011 IXYS All rights reserved 5-6 MKE 38RK600DFELB IF 90 100 80 90 70 80 70 60 Irr 50 60 [A] TVJ = 125°C 30 140 56 Ω 40 20 10 Irr 68 Ω 120 47 Ω trr 47Ω 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 400 1.6 VF [V] 80 [ns] 40 20 600 800 1000 0 1200 Fig. 14 Typ. reverse recovery characteristics of diode D 8 RG = 33 Ω VR = 380 V TVJ = 125°C 60 100 diF /dt [A/µs] Fig. 13 Typ. forward characteristics of diode D 80 33 Ω trr 60 56 Ω 10 0 0.0 160 68 Ω 30 25°C 20 180 RG = 50 [A] 40 200 IF = 30 A VR = 380 V TVJ = 125°C 6 Irr Qrr 40 Qrr 4 [A] [µC] Irr 20 0 0 2 10 20 30 40 50 60 0 70 IF [A] Fig. 15 Typ. reverse recovery characteristics of diode D 20111102a © 2011 IXYS All rights reserved 6-6 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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