MMIX1F132N50P3

MMIX1F132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 63 A 330 A TC = 25C TC = 25C 66 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 520 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 500V 63A  43m 250ns D Symbol TL TSOLD = =   Isolated Tab D S G G = Gate S = Source Features  2500 V~ 50..200 / 11..45 N/lb 8 g Weight D = Drain     Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 5.0  V Applications V  200 nA Note 2, TJ = 125C VGS = 10V, ID = 66A, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings 50 A 3 mA 43 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100475B(6/14) MMIX1F132N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 68 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 110 S 18.6 nF 1710 pF 12 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.16 Qgs ns 19 ns 90 ns 15 ns 267 nC RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 66A 95 nC 63 nC 0.05 30 0.24 C/W C/W C/W Qgd RthJC RthCS RthJA  42 VGS = 10V, VDS = 0.5 • VDSS, ID = 66A Qg(on)  Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 132 A ISM Repetitive, Pulse Width Limited by TJM 530 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 66A, -di/dt = 100A/s Notes: 1.9 16.4 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F132N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 250 140 VGS = 10V 8V 120 VGS = 10V 8V 200 7V I D - Amperes I D - Amperes 100 80 60 40 150 7V 100 6V 50 6V 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 66A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 140 3.2 VGS = 10V VGS = 10V 120 2.8 7V R DS(on) - Normalized I D - Amperes 100 80 6V 60 40 20 I D = 132A 2.0 I D = 66A 1.6 1.2 0.8 5V 0 0.4 0 3.0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 66A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 70 VGS = 10V 125 150 125 150 60 TJ = 125ºC 2.6 50 2.2 I D - Amperes RDS(on) - Normalized 2.4 1.8 40 30 TJ = 25ºC 1.4 20 1.0 10 0 0.6 0 50 100 150 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX1F132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 160 TJ = - 40ºC 180 140 160 TJ = 125ºC 25ºC - 40ºC 100 25ºC 140 g f s - Siemens I D - Amperes 120 80 60 120 125ºC 100 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 300 10 VDS = 250V 9 250 I D = 66A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 TJ = 125ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 VSD - Volts 120 160 200 240 280 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 Ciss RDS(on) Limit 10,000 100 1,000 100µs I D - Amperes Capacitance - PicoFarads 80 Coss 100 10 TJ = 150ºC 10 TC = 25ºC Single Pulse Crss f = 1 MHz 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 MMIX1F132N50P3 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 28 30 RG = 1Ω , VGS = 10V 26 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current RG = 1Ω , VGS = 10V 28 VDS = 250V VDS = 250V 26 t r - Nanoseconds t r - Nanoseconds 24 22 I D = 66A 20 18 I D = 100A 24 TJ = 125ºC 22 20 18 TJ = 25ºC 16 16 14 14 12 12 10 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 250 120 tf 22 100 TJ = 125ºC, VGS = 10V 40 50 20 0 5 6 7 8 9 18 100 I D = 100A 16 95 14 90 I D = 66A 85 10 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 130 300 td(off) - - - - tf 120 RG = 1Ω, VGS = 10V 110 TJ = 125ºC 20 15 100 90 5 40 50 60 70 80 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 90 400 I D = 100A VDS = 250V 200 320 150 240 I D = 66A 100 160 80 50 80 70 100 0 TJ = 25ºC 10 480 td(off) - - - - 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d ( o f f ) - Nanoseconds 25 80 125 TJ = 125ºC, VGS = 10V 250 t d ( o f f ) - Nanoseconds VDS = 250V 30 105 RG - Ohms tf 30 4 110 12 0 35 t f - Nanoseconds t f - Nanoseconds 100 115 td(off) - - - - VDS = 250V 20 t f - Nanoseconds t r - Nanoseconds 60 I D = 66A 3 100 t d ( o f f ) - Nanoseconds I D = 100A t d ( o n ) - Nanoseconds 80 2 90 RG = 1Ω, VGS = 10V VDS = 250V 200 1 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 24 td(on) - - - - 150 70 I D - Amperes MMIX1F132N50P3 Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_132N50P3(K9-W38) 6-02-14-A MMIX1F132N50P3 Package Outline PIN: © 2014 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.