MMIX1F160N30T

Preliminary Technical Information MMIX1F160N30T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr  RDS(on)  (Electrically Isolated Tab) 300V 102A  20m 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C 102 A IDM TC = 25C, Pulse Width Limited by TJM 440 A IA EAS TC = 25C TC = 25C 80 5 A J PD TC = 25C 570 W dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Note 2, TJ = 125C VGS = 10V, ID = 80A, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)  Very High Current Handling Capability  Fast Intrinsic Diode  Avalanche Rated  Very Low RDS(on)  Advantages  V 5.0 V 200 nA 50 A 3 mA 20 m   Easy to Mount Space Savings High Power Density Applications    DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100437A(9/14) MMIX1F160N30T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 90 150 S 24.5 nF 1825 pF 45 pF 1.1  34 ns 68 ns 90 ns 23 ns 376 nC 140 nC 56 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 80A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 80A Qgd 0.22 C/W RthJC 0.05 30 RthCS RthJA C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 640 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM IF = 80A, VGS = 0V QRM Notes: -di/dt = 100A/s VR = 75V 13 200 ns A 1.06 μC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F160N30T Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 300 VGS = 10V VGS = 10V 7V 140 250 7V 200 100 I D - Amperes I D - Amperes 120 6V 80 60 150 6V 100 40 50 20 5V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 4 6 8 10 12 14 16 18 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature 2.8 160 VGS = 10V 7V 140 120 VGS = 10V 6V 100 80 60 5V 40 20 2.4 RDS(on) - Normalized I D - Amperes 2 VDS - Volts 2.0 I D = 160A 1.6 I D = 80A 1.2 0.8 20 4V 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 2.4 25 TJ - Degrees Centigrade 100 VGS = 10V TJ = 125ºC 2.0 80 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 60 40 TJ = 25ºC 1.2 1.0 20 0.8 0.6 0 0 40 80 120 160 200 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX1F160N30T Fig. 7. Input Admittance Fig. 8. Transconductance 200 300 180 140 200 TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens I D - Amperes TJ = - 40ºC 250 160 100 80 60 25ºC 150 125ºC 100 40 50 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 Fig. 10. Gate Charge 10 300 9 250 VDS = 150V I D = 80A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 100 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 50 100 Fig. 11. Capacitance 200 250 300 350 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit C iss 10,000 25µs 1,000 - Amperes 100 D C oss I Capacitance - PicoFarads 150 QG - NanoCoulombs VSD - Volts 100 100µs 10 C rss TJ = 150ºC TC = 25ºC Single Pulse 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 MMIX1F160N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 90 90 RG = 1Ω, VGS = 15V RG = 1Ω, VGS = 15V 80 80 VDS = 150V t r - Nanoseconds 70 t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 I D = 80A 50 I D = 160A 40 VDS = 150V TJ = 25ºC 70 60 50 TJ = 125ºC 40 30 20 30 25 35 45 55 65 75 85 95 105 115 125 80 90 100 110 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 260 td(on) - - - - 120 60 100 40 60 20 20 0 3 28 4 5 6 7 8 9 24 I D = 160A 20 90 18 80 16 25 35 700 130 td(off) - - - - 45 55 65 75 85 95 105 200 160 80 70 160 0 140 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 150 320 I D = 160A 240 100 130 400 300 80 120 480 I D = 80A 18 110 td(off) - - - - 400 90 100 560 VDS = 150V 500 20 16 70 125 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d ( o f f ) - Nanoseconds 100 115 TJ = 125ºC, VGS = 15V t d ( o f f ) - Nanoseconds TJ = 25ºC, 125ºC tf 600 120 110 90 100 I D = 80A Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 24 80 110 22 10 VDS = 150V 22 120 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current RG = 1Ω, VGS = 15V 130 td(off) - - - - TJ - Degrees Centigrade tf 160 RG = 1Ω, VGS = 15V RG - Ohms 26 t f - Nanoseconds t f - Nanoseconds I D = 80A 140 2 150 VDS = 150V t f - Nanoseconds t r - Nanoseconds 80 I D = 160A 1 140 t d ( o f f ) - Nanoseconds 100 tf 26 t d ( o n ) - Nanoseconds VDS = 150V 180 130 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 28 140 TJ = 125ºC, VGS = 15V 220 120 I D - Amperes MMIX1F160N30T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_160N30T (9E-N32) 9-18-14-A MMIX1F160N30T Package Outline PIN: © 2014 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.