MMIX1F180N25T

Preliminary Technical Information MMIX1F180N25T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr  RDS(on)  (Electrically Isolated Tab) 250V 132A  13m 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C 132 A IDM TC = 25C, Pulse Width Limited by TJM 500 A IA EAS TC = 25C TC = 25C 90 5 A J PD TC = 25C 570 W dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 250 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Note 2, TJ = 125C VGS = 10V, ID = 90A, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~)  Very High Current Handling Capability  Fast Intrinsic Diode  Avalanche Rated  Very Low RDS(on)  Advantages  V 5.0 V 200 nA 50 A 2.5 mA 13 m   Easy to Mount Space Savings High Power Density Applications    DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100438A(9/14) MMIX1F180N25T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 90 150 S 23.8 nF 2070 pF 47 pF 1.1  35 ns 52 ns 88 ns 20 ns 364 nC 137 nC 60 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 90A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 90A Qgd 0.22 C/W RthJC 0.05 30 RthCS RthJA C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr IRM IF = 90A, VGS = 0V QRM Notes: -di/dt = 100A/s VR = 75V 11 200 ns A 0.77 μC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F180N25T Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 180 350 VGS = 10V 8V 160 VGS = 10V 8V 300 140 7V 7V 250 I D - Amperes I D - Amperes 120 100 80 6V 200 150 60 6V 100 40 50 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 4 6 8 10 12 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 180 2.6 VGS = 10V 8V 7V 160 2.4 VGS = 10V 2.2 120 RDS(on) - Normalized 140 I D - Amperes 2 VDS - Volts 6V 100 80 60 2.0 1.8 I D = 180A 1.6 I D = 90A 1.4 1.2 1.0 40 5V 0.8 20 0.6 4V 0.4 0 0 2.4 0.4 0.8 1.2 1.6 2 2.4 3.2 3.6 -50 4 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 140 VGS = 10V 2.2 125 150 120 TJ = 125ºC 2.0 100 1.8 I D - Amperes RDS(on) - Normalized 2.8 1.6 1.4 60 40 TJ = 25ºC 1.2 80 20 1.0 0.8 0 0 50 100 150 200 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 MMIX1F180N25T Fig. 7. Input Admittance Fig. 8. Transconductance 280 200 TJ = - 40ºC 180 240 160 200 g f s - Siemens I D - Amperes 140 120 100 TJ = 125ºC 80 25ºC 25ºC 160 125ºC 120 - 40ºC 60 80 40 40 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts 100 120 140 160 180 200 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 125V 9 250 I D = 90A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 TJ = 125ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 50 100 Fig. 11. Capacitance 200 250 300 350 Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz RDS(on) Limit Ciss 10,000 25µs - Amperes 100 Coss 100µs D 1,000 I Capacitance - PicoFarads 150 QG - NanoCoulombs VSD - Volts 10 100 TJ = 150ºC TC = 25ºC Single Pulse Crss 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 MMIX1F180N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 80 80 RG =1Ω , VGS = 15V 70 t r - Nanoseconds 60 t r - Nanoseconds RG = 1Ω , VGS = 15V 70 VDS = 125V 50 I D = 90A 40 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 30 I D = 180A VDS = 125V 60 TJ = 125ºC 50 40 TJ = 25ºC 30 20 20 10 0 10 25 35 45 55 65 75 85 95 105 115 90 125 100 110 120 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 240 160 170 80 I D = 180A 120 60 I D = 90A 40 120 td(off) - - - 110 VDS = 125V I D = 180A 22 100 18 90 I D = 90A 14 40 80 20 0 10 0 1 2 3 4 5 6 7 8 9 25 10 35 45 55 RG - Ohms tf 24 130 700 120 600 td(off) - - - - RG = 1Ω, VGS = 15V 100 TJ = 25ºC 18 90 16 80 14 120 130 140 150 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 160 170 70 180 t f - Nanoseconds TJ = 125ºC 20 110 85 95 105 115 70 125 tf 560 td(off) - - - - 480 TJ = 125ºC, VGS = 15V VDS = 125V 500 400 400 320 I D = 180A 300 240 I D = 90A 200 160 100 80 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d ( o f f ) - Nanoseconds 110 t d ( o f f ) - Nanoseconds 22 100 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance VDS = 125V 90 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 26 t f - Nanoseconds 180 t d ( o f f ) - Nanoseconds 100 80 150 RG = 1Ω, VGS = 15V 26 VDS = 125V 160 tf 120 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 15V 200 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 30 140 t f - Nanoseconds 280 130 I D - Amperes MMIX1F180N25T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_180N25T (9E-N25) 9-18-14-A MMIX1F180N25T Package Outline PIN: © 2014 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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