MMIX1F360N15T2

Preliminary Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS(on) ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 235 A IDM TC = 25°C, Pulse Width Limited by TJM 900 A IA EAS TC = 25°C TC = 25°C 180 3 A J PD TC = 25°C 680 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Note 2, TJ = 150°C VGS = 10V, ID = 100A, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low RDS(on) z Advantages V 5.0 V ±200 nA 50 μA 5 mA 4.4 mΩ z z z Easy to Mount Space Savings High Power Density Applications z z z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100434A(03/12) MMIX1F360N15T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 140 230 S 47.5 nF 3060 pF 665 pF 2.7 Ω 50 ns 170 ns 115 ns 265 ns 715 nC 185 nC 200 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 180A Qgd 0.22 °C/W RthJC 0.05 30 RthCS RthJA °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr IRM IF = 160A, VGS = 0V QRM Notes: -di/dt = 100A/μs VR = 60V 360 A 1440 A 1.2 V 9 150 ns A 500 nC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F360N15T2 Package Outline PIN: © 2012 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain MMIX1F360N15T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 350 VGS = 15V 10V 8V 7V 300 250 250 200 ID - Amperes ID - Amperes VGS = 10V 7V 6V 300 6V 150 100 200 150 5V 100 50 50 5V 4V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 VDS - Volts 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 350 3.0 VGS = 10V 8V 7V 300 R DS(on) - Normalized 6V 200 5V 150 100 50 VGS = 10V 2.6 250 ID - Amperes 5 VDS - Volts 4V 2.2 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 0 0.2 0 0.5 1 1.5 2 2.5 3 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.4 240 VGS = 10V 3.0 TJ = 175ºC ID - Amperes R DS(on) - Normalized 200 2.6 2.2 1.8 160 120 80 1.4 TJ = 25ºC 40 1.0 0.6 0 0 50 100 150 200 250 300 350 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 MMIX1F360N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 180 400 160 120 g f s - Siemens ID - Amperes 350 TJ = 150ºC 25ºC - 40ºC 140 TJ = - 40ºC 100 80 60 25ºC 300 250 150ºC 200 150 100 40 50 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 20 40 60 80 VGS - Volts 120 140 180 200 10 VDS = 75V 9 300 I D = 180A 8 250 I G = 10mA VGS - Volts 7 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 VSD - Volts 400 500 600 700 800 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit 25µs Ciss 100µs 100 10,000 ID - Amperes Capacitance - PicoFarads 160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 IS - Amperes 100 ID - Amperes Coss 10 1ms 1,000 1 10ms TJ = 175ºC Crss 100ms DC TC = 25ºC Single Pulse f = 1 MHz 0.1 100 0 5 10 15 20 25 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved 30 35 40 1 10 100 VDS - Volts 1,000 MMIX1F360N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 340 300 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 260 VDS = 75V 260 I D t r - Nanoseconds t r - Nanoseconds 300 = 100A 220 180 I 140 D = 200A VDS = 75V 220 TJ = 25ºC 180 TJ = 125ºC 140 100 100 60 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 160 180 200 180 600 150 400 120 300 90 200 60 220 tf td(off) - - - - 200 RG = 1Ω, VGS = 10V VDS = 75V 500 180 400 160 I D = 200A I D = 100A 300 140 200 120 100 100 I D = 100A 100 30 0 2 3 4 5 6 7 8 9 25 10 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - RG = 1Ω, VGS = 10V 220 800 180 TJ = 125ºC 120 140 160 180 700 600 600 I D = 200A, 100A 300 300 120 200 200 100 200 100 TJ = 25ºC 100 VDS = 75V 700 400 140 80 800 400 200 60 td(off) - - - - 500 160 0 tf 500 300 100 900 TJ = 125ºC, VGS = 10V 200 t d(off) - Nanoseconds 400 900 80 125 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 75V 500 240 t f - Nanoseconds tf 600 40 35 RG - Ohms 700 t f - Nanoseconds 0 0 1 t d(off) - Nanoseconds I D = 200A 700 t d(on) - Nanoseconds VDS = 75V 500 t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 210 t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 700 600 120 ID - Amperes MMIX1F360N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.400 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX1F360N15T2 (9V)01-16-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.