MMIX1F40N110P

Advance Technical Information MMIX1F40N110P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1100V 24A Ω 290mΩ 300ns D G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 24 A 100 A TC = 25°C 20 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z z z V 6.5 V ±200 nA TJ = 125°C VGS = 10V, ID = 20A, Note 1 50 μA 3 mA 290 mΩ Applications z z z z z © 2012 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies Pulse Power Applications Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators DC-DC converters DC-AC inverters DS100431(01/12) MMIX1F40N110P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 20A, Note 1 32 S 19 nF 1070 pF 46 pF 1.65 Ω 53 ns 55 ns 110 ns 54 ns 310 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 20A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd 95 nC 142 nC 0.25 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 20A, -di/dt = 100A/μs 2.2 16.0 VR = 100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F40N110P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 80 VGS = 10V VGS = 10V 35 70 60 25 50 20 ID - Amperes ID - Amperes 9V 30 8V 15 10 9V 40 30 8V 20 5 10 7V 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 40 VGS = 10V 9V 35 VGS = 10V 2.8 R DS(on) - Normalized 30 ID - Amperes 20 VDS - Volts VDS - Volts 8V 25 20 15 7V 10 2.4 I D = 40A 2.0 I D = 20A 1.6 1.2 0.8 5 6V 0 0.4 0 5 10 15 20 25 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 125 150 125 150 28 VGS = 10V 2.4 TJ = 125ºC 24 20 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 16 12 1.4 8 TJ = 25ºC 1.2 4 1.0 0 0.8 0 10 20 30 40 50 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX1F40N110P Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 40 TJ = - 40ºC 50 35 g f s - Siemens ID - Amperes 30 25 TJ = 125ºC 20 25ºC - 40ºC 15 40 25ºC 30 125ºC 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 350 400 450 500 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 120 16 VDS = 550V 14 I D = 20A 100 I G = 10mA 12 VGS - Volts IS - Amperes 80 60 TJ = 125ºC 10 8 6 40 TJ = 25ºC 4 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 150 VSD - Volts 200 250 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 TJ = 150ºC TC = 25ºC Single Pulse 100 Ciss 10,000 25µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100µs 10 1ms 1 10ms 100 100ms 0.1 10 0 5 DC Crss f = 1 MHz 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 10 100 1,000 VDS - Volts 10,000 MMIX1F40N110P Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance 0.4 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_40N110P(97)12-15-11-A MMIX1F40N110P PIN: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.