MMIX1F420N10T

Advance Technical Information MMIX1F420N10T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = Trr ≤ RDS(on) ≤ (Electrically Isolated Tab) 100V 334A Ω 2.6mΩ 140ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS 334 A 1000 A TC = 25°C TC = 25°C 200 5 A J PD TC = 25°C 680 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 Isolated Tab D S G G = Gate S = Source Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low RDS(on) z Advantages V z TJ = 150°C 5.0 V ±200 nA 50 μA 5 mA z z z 2.6 mΩ Easy to Mount Space Savings High Power Density Applications z z © 2012 IXYS CORPORATION, All Rights Reserved D = Drain DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100410(01/12) MMIX1F420N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 110 185 S 47 nF 4390 pF 530 pF 1.46 Ω 47 ns 155 ns 115 ns 255 ns 670 nC 170 nC 195 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 210A Qgd 0.22 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/μs VR = 60V 420 A 1680 A 1.2 V 7 140 ns A 380 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F420N10T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 400 350 VGS = 15V 10V 8V 7V 300 6V 300 ID - Amperes 250 ID - Amperes VGS = 15V 10V 7V 350 6V 200 150 5.5V 250 200 150 5V 100 5V 100 50 50 4V 4V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 VDS - Volts 2.5 3 3.5 Fig. 4. Normalized RDS(on) vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.4 320 VGS = 15V 10V 8V 7V 240 VGS = 10V 6V 200 2.0 R DS(on) - Normalized 280 ID - Amperes 2 VDS - Volts 5V 160 120 4.5V I D < 420A 1.6 1.2 80 0.8 40 4V 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 1.6 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. Normalized RDS(on) vs. Drain Current 350 2.8 VGS = 10V 2.6 300 250 TJ = 175ºC 2.2 ID - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 1.4 200 150 100 1.2 TJ = 25ºC 50 1.0 0.8 0 0 50 100 150 200 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 MMIX1F420N10T Fig. 7. Input Admittance Fig. 8. Transconductance 180 350 TJ = - 40ºC 160 300 140 250 100 g f s - Siemens ID - Amperes 120 TJ = 150ºC 80 25ºC 60 200 150ºC 150 100 - 40ºC 40 25ºC 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 VGS - Volts 100 120 140 160 180 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 10 300 250 9 VDS = 50V 8 I G = 10mA I D = 210A 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 VSD - Volts 200 300 400 500 600 700 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100.0 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads RDS(on) Limit Ciss Coss 100µs 100 1ms 10 1.0 10ms TJ = 175ºC 1 Crss 100ms DC TC = 25ºC Single Pulse f = 1 MHz 0 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 MMIX1F420N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 340 320 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 280 VDS = 50V 300 VDS = 50V I t r - Nanoseconds t r - Nanoseconds 240 260 = 200A D 220 180 200 160 TJ = 125ºC 120 TJ = 25ºC 80 I 140 = 100A D 40 0 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 td(on) - - - - 120 300 80 I D = 100A 200 40 100 4 5 6 7 8 9 200 VDS = 50V 180 400 160 I D = 200A 300 140 I D = 100A 200 120 100 100 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 500 td(off) - - - - TJ = 25ºC 200 140 100 t d(off) - Nanoseconds 180 TJ = 125ºC td(off) - - - - 700 VDS = 50V 600 600 I D = 200A 500 500 I D = 100A 400 400 300 300 200 200 100 0 40 60 80 100 120 140 160 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 180 60 200 100 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 50V 300 tf TJ = 125ºC, VGS = 10V 220 t f - Nanoseconds 400 800 700 RG = 1Ω, VGS = 10V 80 125 800 260 tf t f - Nanoseconds td(off) - - - - 0 0 3 tf RG = 1Ω, VGS = 10V 500 t f - Nanoseconds 400 2 200 t d(off) - Nanoseconds 160 I D = 200A t d(on) - Nanoseconds t r - Nanoseconds VDS = 50V 1 180 220 600 200 TJ = 125ºC, VGS = 10V 500 160 700 240 tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 120 ID - Amperes MMIX1F420N10T Fig. 19. Maximum Transient Thermal Impedance 1 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.4 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIX1F420N10T (9V)12-15-11 MMIX1F420N10T Package Outline PIN: © 2012 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.