MMIX1F44N100Q3

Advance Technical Information MMIX1F44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 30 A 110 A TC = 25°C 44 A EAS TC = 25°C 4 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 694 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z z V 6.5 V ±200 nA TJ = 125°C VGS = 10V, ID = 22A, Note 1 z 50 μA 3 mA 245 mΩ Applications z z z z z © 2012 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100429(01/12) MMIX1F44N100Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 26 VDS = 20V, ID = 22A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 43 S 13.6 nF 1046 pF 86 pF 0.12 Ω 48 ns 30 ns 66 ns 28 ns 264 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 0.5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd 76 nC 110 nC 0.18 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 22A, -di/dt = 100A/μs 2.1 16.2 VR = 100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F44N100Q3 Fig. 1. Output Characteristics @ T J = 25ºC 45 VGS = 10V 40 VGS = 10V 9V 80 35 70 30 60 8V ID - Amperes ID - Amperes Fig. 2. Extended Output Characteristics @ T J = 25ºC 90 25 20 15 50 40 8V 30 10 20 7V 5 10 6V 0 0 1 2 3 4 5 6 7 7V 0 8 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 45 3.2 VGS = 10V 8V 40 VGS = 10V 2.8 R DS(on) - Normalized 35 ID - Amperes 30 25 7V 20 15 2.4 I D = 44A 2.0 I D = 22A 1.6 1.2 10 6V 5 0.8 5V 0 0 5 10 15 0.4 20 25 -50 25 50 75 100 Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 VGS = 10V 30 TJ = 125ºC 2.4 25 2.2 ID - Amperes R DS(on) - Normalized 0 TJ - Degrees Centigrade 2.8 2.6 -25 VDS - Volts 2.0 1.8 1.6 1.4 20 15 10 TJ = 25ºC 1.2 5 1.0 0 0.8 0 10 20 30 40 50 60 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX1F44N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 80 60 70 60 50 25ºC g f s - Siemens ID - Amperes TJ = - 40ºC 40 TJ = 125ºC 25ºC 30 - 40ºC 20 50 40 125ºC 30 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 10 20 VGS - Volts 40 50 60 70 200 240 280 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 140 9 VDS = 500V 8 I G = 10mA I D = 22A 120 100 7 VGS - Volts IS - Amperes 30 80 60 6 5 4 TJ = 125ºC 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 VSD - Volts 120 160 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit 1ms 100µs 100 10,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 1,000 10 1 100 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 MMIX1F44N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N100Q3(Q9)12-15-11-A MMIX1F44N100Q3 PIN: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 = Gate 5-12 = Source 13-24 = Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.