MMIX1G120N120A3V1

Advance Technical Information MMIX1G120N120A3V1 VCES = 1200V GenX3TM 1200V IGBT w/ Diode IC110 = 105A VCE(sat) ≤ 2.2V (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBT for 3kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 220 105 700 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load ICM = 240 @ 0.8 • VCES A G PC TC = 25°C 400 W G = Gate C = Collector TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 V~ 50..200/11..45 N/lb. 8 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60Hz, 1 minute FC Mounting Force Weight E Isolated Tab C E E = Emitter Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Optimized for Low Conduction losses Square RBSOA Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 VCE = 0V, VGE = ± 20V VCE(sat) IC V 50 μA Note 2, TJ = 125°C IGES High Power Density Low Gate Drive Requirement = 100A, VGE = 15V, Note 1 TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 5 mA ±100 nA 1.85 1.95 2.20 V V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100435(01/12) MMIX1G120N120A3V1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 45 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 120A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 73 S 9900 655 240 pF pF pF 420 70 180 nC nC nC 40 67 10 490 325 33 ns ns mJ ns ns mJ 30 75 15 685 680 58 ns ns mJ ns ns mJ 0.05 30 0.31 °C/W °C/W °C/W Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 960V, RG = 1Ω Note 3 Inductive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 960V, RG = 1Ω Note 3 RthJC RthCS RthJA Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 50A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. 1.8 20 A 700 ns 0.50 °C/W RthJC Notes: V 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1G120N120A3V1 Package Outline PIN: © 2012 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Emitter 13-24 = Collector MMIX1G120N120A3V1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 360 240 VGE = 15V 13V 11V 200 VGE = 15V 13V 11V 320 280 9V IC - Amperes IC - Amperes 160 120 7V 80 240 9V 200 160 7V 120 80 40 40 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 5 6 7 8 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 9 10 1.6 VGE = 15V 13V 11V 1.5 VGE = 15V I 1.4 VCE(sat) - Normalized 200 160 9V 120 7V 80 C = 240A 1.3 1.2 1.1 I C = 120A I C = 60A 1.0 0.9 0.8 40 0.7 5V 0.6 0 0 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 VCE - Volts 25 50 75 100 125 150 7.0 7.5 8.0 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 6.0 5.5 180 TJ = 25ºC 5.0 160 4.5 140 IC - Amperes VCE - Volts 4 VCE - Volts 240 IC - Amperes 5V 0 4.0 I 3.5 C = 240A 3.0 100 TJ = 125ºC 25ºC - 40ºC 80 60 120A 2.5 120 40 2.0 1.5 20 60A 1.0 0 6 7 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 MMIX1G120N120A3V1 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC 25ºC 80 14 VCE = 600V 12 I G = 10mA I C = 120A 10 VGE - Volts g f s - Siemens 100 125ºC 60 8 6 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 IC - Amperes 200 250 300 350 400 450 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 280 100,000 f = 1MHz Cies 200 10,000 IC - Amperes Capacitance - PicoFarads 240 Coes 1,000 160 120 80 40 TJ = 125ºC RG = 1Ω dv / dt < 10V / ns Cres 100 0 5 10 15 20 25 30 35 0 200 40 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved 0.1 1 10 MMIX1G120N120A3V1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 90 --- TJ = 125ºC , VGE = 15V VCE = 960V 90 32 80 Eoff 70 VCE = 960V 28 I 50 C = 100A 20 30 8 20 8 10 4 0 3 4 5 6 7 8 9 12 TJ = 125ºC 10 12 2 16 40 30 1 20 6 TJ = 25ºC 50 10 55 60 65 70 RG - Ohms ---- RG = 1Ω , VGE = 15V 70 900 18 850 50 12 40 10 30 8 20 6 I C = 50A 10 0 45 55 65 75 85 95 105 115 tfi td(off) - - - - 1300 VCE = 960V I 1100 1000 I 600 C = 100A 450 2 125 400 800 I 900 1100 800 500 2 3 4 5 300 10 100 90 95 1150 tfi td(off) - - - - 1050 RG = 1Ω , VGE = 15V VCE = 960V t f i - Nanoseconds 700 950 600 850 I C = 50A, 100A 300 550 400 200 450 300 100 100 500 TJ = 25ºC 85 9 650 600 80 8 400 400 75 7 750 700 70 6 500 500 65 700 = 50A 600 1 1200 800 TJ = 125ºC 60 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 900 55 900 550 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 350 125 t d(off) - Nanoseconds 700 50 1200 650 4 1000 VCE = 960V 200 = 50A 700 500 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 1Ω , VGE = 15V 600 C RG - Ohms 1000 800 1400 750 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 2 100 95 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 900 90 - Nanoseconds 14 35 85 1500 800 16 60 25 80 t d(off) I C = 100A VCE = 960V 20 Eon - MilliJoules Eoff - MilliJoules Eon 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f i - Nanoseconds 90 Eoff 4 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 80 18 14 50 16 10 ---- Eon RG = 1Ω , VGE = 15V 60 40 I C = 50A 20 Eon - MilliJoules 24 Eon - MilliJoules 60 Eoff - MilliJoules 70 Eoff - MilliJoules Eon - Eoff 80 36 MMIX1G120N120A3V1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 tri 140 td(on) - - - - 90 110 80 100 TJ = 125ºC, VGE = 15V 70 = 100A 100 60 80 50 60 40 I 40 C = 50A 0 1 2 3 4 5 6 7 8 9 55 50 VCE = 960V 80 45 TJ = 125ºC, 25ºC 70 40 60 35 50 30 40 25 20 30 20 10 20 30 20 td(on) - - - - RG = 1Ω , VGE = 15V 90 t r i - Nanoseconds t r i - Nanoseconds C tri 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds I t d(on) - Nanoseconds VCE = 960V 120 60 15 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 54 90 tri td(on) - - - - 80 VCE = 960V 50 RG = 1Ω , VGE = 15V 46 70 42 I C = 100A 60 38 50 34 40 30 I 30 C = 50A 26 20 25 35 45 t d(on) - Nanoseconds t r i - Nanoseconds 100 55 65 75 85 95 105 115 22 125 TJ - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX1G120N120A3V1(9P)01-17-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.