MMIX1T550N055T2

Advance Technical Information MMIX1T550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS(on) ≤ 55V 550A Ω 1.3mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient ±20 V ID25 TC = 25°C (Chip Capability) IDM TC = 25°C, Pulse Width Limited by TJM IA EAS PD Isolated Tab D 550 A 2000 A TC = 25°C TC = 25°C 200 3 A J TC = 25°C 830 W G = Gate S = Source -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 55 VGS(th) VDS = VGS, ID = 250μA 1.8 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 150°C V 3.8 V ±200 nA 10 μA 1.5 mA 1.3 mΩ S G z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Applications z z z © 2010 IXYS CORPORATION, All Rights Reserved D = Drain DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100281(08/10) MMIX1T550N055T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 150 S 40 nF 4970 pF 1020 pF 1.36 Ω 45 ns 40 ns 90 ns tf 230 ns Qg(on) 595 nC 150 nC 163 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) Qgs Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.18 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 100A, VGS = 0V QRM Note -di/dt = 100A/μs VR = 27.5V 550 A 1700 A 1.2 V 100 5 ns A 250 nC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1T550N055T2 Package Outline PIN: © 2010 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain IXYS REF: MMIX1T_550N055T2 (V9) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.