MMIX1X100N60B3H1

XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 (Electrically Isolated Tab) VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 IF90 ICM TC TC TC TC = 25°C (Chip Capability) = 110°C = 90°C = 25°C, 1ms 145 68 54 440 A A A A IA EAS TC TC = 25°C = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 V~ 50..200/11..45 N/lb. 8 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s VISOL 50/60Hz, 1 minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 70A, VGE = 15V, Note 1 5.5 V 50 μA 4 mA ±100 nA TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved 1.50 1.77 C E G G = Gate C = Collector E = Emitter 1.80 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Optimized for 10-30kHz Switching Square RBSOA FBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement V TJ = 125°C Isolated Tab Features 400 TJ E V V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100377C(04/13) MMIX1X100N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 70A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS 40 S 4860 475 83 pF pF pF 143 37 60 nC nC nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.05 0.31 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. 1.6 1.4 TJ = 150°C TJ = 100°C V V 8.3 A 140 ns 0.62 °C/W RthJC Notes: 2.5 1.8 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1X100N60B3H1 Package Outline PIN: © 2013 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Emitter 13-24 = Collector MMIX1X100N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 140 350 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 13V 250 80 10V 60 9V IC - Amperes IC - Amperes 14V 300 40 12V 200 11V 150 10V 100 8V 20 9V 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 Fig. 3. Output Characteristics @ T J = 150ºC VGE = 15V 13V 12V 120 IC - Amperes 80 9V 60 40 8V 7V 5V 1 1.5 2 2.5 3 1.2 18 20 150 175 = 140A C = 70A 1.0 I C = 35A 0.6 -50 3.5 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I 3.0 C IC - Amperes VCE - Volts C I VCE - Volts 5.0 16 1.4 0.8 20 0 I 1.6 10V 0.5 14 VGE = 15V 11V 100 0 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VCE(sat) - Normalized 140 10 VCE - Volts VCE - Volts = 140A 2.5 80 60 70A 2.0 TJ = 150ºC 25ºC - 40ºC 100 40 1.5 20 35A 1.0 0 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4 5 6 7 8 VGE - Volts 9 10 11 MMIX1X100N60B3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 50 I C = 70A I G = 10mA 12 150ºC VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 Cies 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 2Ω dv / dt < 10V / ns 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 25µs 100µs 10 1ms Z(th)JC - ºC / W ID - Amperes 100 0.1 0.01 1 TJ = 150ºC 10ms TC = 25ºC Single Pulse DC 0.1 1 10 100 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 100ms 1000 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 MMIX1X100N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eon - Eoff 4.0 Eoff --6 TJ = 150ºC , VGE = 15V 4 2.5 3 I C 2.0 Eoff - MilliJoules Eoff - MilliJoules I C = 100A = 50A 3 4 5 6 7 8 9 10 11 12 13 14 3 2 2 TJ = 25ºC 1 0 1 2 TJ = 150ºC 3 1 2 1.5 4 VCE = 360V 20 15 30 40 50 RG - Ohms 5 3 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 3 4 5 6 7 120 80 50 70 10 11 12 13 14 15 80 tfi 90 td(off) - - - - 240 220 RG = 2Ω , VGE = 15V TJ = 25ºC 100 60 9 40 100 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 150 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 280 160 40 180 = 100A 100 240 200 30 C 140 280 320 240 TJ = 150ºC 20 260 220 2 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 250 = 50A 100 t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 300 C RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 350 300 140 0 150 125 340 td(off) - - - - TJ - Degrees Centigrade 400 0 100 VCE = 360V t f i - Nanoseconds 3 50 90 t d(off) - Nanoseconds I C = 100A 25 80 TJ = 150ºC, VGE = 15V 300 4 VCE = 360V Eon - MilliJoules Eoff - MilliJoules tfi ---- RG = 2Ω , VGE = 15V 4 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 340 5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon - MilliJoules 5 Eon - MilliJoules 3.5 5 ---- Eon RG = 2Ω , VGE = 15V 4 VCE = 360V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current MMIX1X100N60B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 360V 140 tri 120 68 = 100A 60 100 52 80 I C 44 = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 tri TJ = 150ºC, 25ºC 80 32 60 30 40 28 20 26 30 40 50 60 70 80 90 24 100 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 20 15 RG - Ohms 180 100 0 20 2 36 RG = 2Ω , VGE = 15V t d(on) - Nanoseconds C t d(on) - Nanoseconds I 120 38 td(on) - - - - VCE = 360V t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri Fig. 20. Inductive Turn-on Switching Times vs. Collector Current td(on) - - - - 37 36 RG = 2Ω , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 100 125 28 150 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: X_100N60B3(7D)12-01-11-B MMIX1X100N60B3H1 160 A 140 IF 4000 80 TVJ= 100°C nC 120 3000 TVJ= 25°C 100 TVJ=150°C 60 IF=120A IF= 60A Qr TVJ=100°C 80 TVJ= 100°C A IRM IF=120A IF= 60A 2000 40 1000 20 60 40 20 0 0 1 2 0 100 V A/μs 1000 -diF/dt VF Fig. 23 Typ. Reverse Recovery Charge Qrr Fig. 22 Forward Current IF vs. VF TVJ= 100°C 140 2.0 ns 130 trr 1.5 Kf IRM 0.5 Qr 0 110 0 40 400 600 A/μs 800 1000 -diF/dt 20 1.6 V V FR 15 μs tfr VFR 10 100 5 80 120 °C 160 T VJ Parameters Fig. 25 Typ. Dynamic Qrr, IRM 80 0 200 400 600 800 A/μs 1000 0 0.4 TVJ= 100°C 0 200 400 -diF/dt Time t Fig. 26 Typ Recovery rr 0.0 600 A/μs 800 1000 diF/dt Constants for ZthJC calculation: 1 i K/W 1 2 0.1 Z thJC 0.01 0.001 0.0001 0.00001 1.2 0.8 90 0.0 200 Fig. 24 Typ. Peak Reverse Current IRM IF=120A IF= 60A 120 1.0 0 DSEP 60-06A 0.0001 0.001 0.01 0.1 Fig. 27. Maximum Transient Thermal Impedance IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. s t 1 Rthi (K/W) ti (s) 0.324 0.125 0.0052 0.0003 tfr Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.