MMIX1X200N60B3H1

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 (Electrically Isolated Tab) VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms IA EAS TC TC SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive PC TC C G Maximum Ratings = 25°C to 150°C = 25°C to 150°C, RGE = 1MΩ 600 600 V V ±20 ±30 V V 175 72 28 1000 A A A A 100 1 A J ICM = 400 @VCE ≤ VCES A 10 μs 520 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 2500 V~ z 50..200/11..45 N/lb. 8 g = 25°C = 25°C = 25°C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60Hz, 1 minute FC Mounting Force E Isolated Tab C E G G = Gate C = Collector z z z z z Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES 6.0 Note 2, TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved z 1.40 1.58 High Power Density Low Gate Drive Requirement V Applications V z 50 μA 3 mA VCE = VCES, VGE = 0V Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Optimized for Low Conduction and Switching Losses Avalanche Rated Short Circuit Capability Very High Current Capability Square RBSOA Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) ±200 nA 1.70 V V = Emitter Features z Weight E z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100473A(02/13) MMIX1X200N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 RthJC RthCS 45 S 9970 570 183 pF pF pF 315 98 130 nC nC nC 48 100 2.85 160 110 2.90 ns ns mJ ns ns mJ 4.40 46 94 4.40 180 215 3.45 ns ns mJ ns ns mJ 0.05 0.24 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, -diF/dt = 1500A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. 2.5 TJ = 150°C 2.3 V V TJ = 150°C 95 A 100 ns 0.83 °C/W RthJC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp ICES measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1X200N60B3H1 PIN: © 2013 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Emitter 13-24 = Collector MMIX1X200N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 200 VGE = 15V 13V 12V 300 150 11V 100 10V 11V 200 10V 150 9V 100 8V 50 50 12V 250 IC - Amperes IC - Amperes VGE = 15V 13V 9V 8V 7V 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 1.5 200 VGE = 15V 13V 12V 12 14 VGE = 15V 1.4 11V VCE(sat) - Normalized 150 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 10V 100 9V I 1.3 C = 200A 1.2 1.1 I 1.0 C = 150A I C 0.9 50 8V 0.8 7V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 -50 -25 0 25 125 150 175 180 4.5 140 IC - Amperes 160 4.0 3.5 C 100 Fig. 6. Input Admittance 5.0 I 75 200 TJ = 25ºC 5.5 3.0 50 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 = 100A 0.7 2.8 VCE - Volts VCE - Volts 8 VCE - Volts VCE - Volts = 200A 120 100 TJ = 150ºC 25ºC 80 - 40ºC 60 2.5 150A 2.0 40 100A 1.5 20 1.0 0 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4 5 6 7 8 VGE - Volts 9 10 11 MMIX1X200N60B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 110 16 100 TJ = - 40ºC, 25ºC, 150ºC I C = 200A I G = 10mA 12 80 g f s - Siemens VCE = 300V 14 90 VGE - Volts 70 60 50 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 160 200 240 280 320 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 450 100,000 f = 1 MHz Capacitance - PicoFarads 120 QG - NanoCoulombs IC - Amperes 400 350 Cies 300 IC - Amperes 10,000 Coes 1,000 250 200 150 100 50 Cres 100 0 5 10 15 20 25 30 35 0 100 40 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 1000 VCE(sat) Limit 25µs 0.1 100 10 1ms 10ms 1 Z(th)JC - ºC / W ID - Amperes 100µs 0.01 0.001 TJ = 150ºC TC = 25ºC Single Pulse 100ms DC 0.1 1 10 100 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 1000 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 MMIX1X200N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff --- 6 TJ = 150ºC , VGE = 15V VCE = 360V 3.0 3 2.5 2 C 3 4 5 6 7 8 3.0 3 TJ = 25ºC 2.5 1 9 1.5 50 10 55 60 65 70 RG - Ohms 4.0 2 2.0 I C = 50A 1.5 75 100 125 t f i - Nanoseconds Eoff - MilliJoules 2.5 td(off) - - - 500 VCE = 360V I 280 1 200 0 150 160 td(off) - - - - VCE = 360V 280 450 260 400 240 350 I t f i - Nanoseconds 220 220 200 180 TJ = 25ºC 100 2 3 4 5 8 9 10 90 95 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. td(off) - - - - 260 RG = 1Ω , VGE = 15V VCE = 360V 240 I C = 50A I C = 100A 150 50 85 tfi 280 180 120 100 60 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 200 100 80 7 200 140 75 6 250 100 70 200 220 160 65 = 100A 300 140 60 C 160 140 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 260 t d(off) - Nanoseconds TJ = 150ºC t f i - Nanoseconds tfi RG = 1Ω , VGE = 15V 55 400 RG - Ohms 380 50 = 50A 300 1 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 180 C 240 TJ - Degrees Centigrade 300 0 100 t d(off) - Nanoseconds 3 Eon - MilliJoules I C = 100A 340 95 TJ = 150ºC, VGE = 15V 320 4 3.0 50 90 600 tfi VCE = 360V 25 85 360 ---- RG = 1Ω , VGE = 15V 3.5 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 5 Eon 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 2 1 0 2 TJ = 150ºC 2.0 = 50A 1.5 1 4 VCE = 360V Eon - MilliJoules 4 Eon - MilliJoules 3.5 I ---- 5 I C = 100A 2.0 Eon 5 RG = 1Ω , VGE = 15V 3.5 Eoff - MilliJoules Eon - Eoff 4.0 Eoff - MilliJoules 4.0 7 4.5 Fig. 14. Inductive Switching Energy Loss vs. Collector Current MMIX1X200N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri td(on) - - - - VCE = 360V 140 85 = 100A 100 75 I 80 C = 50A 65 60 55 40 45 20 3 4 5 6 7 8 9 150 52 tri VCE = 360V C 50 48 = 100A 90 46 70 44 50 42 I C = 50A 30 40 10 25 50 75 100 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 125 38 150 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V I 44 TJ = 150ºC 40 42 20 40 55 60 65 70 75 80 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 110 60 50 10 RG - Ohms 130 46 TJ = 25ºC 0 35 2 80 85 90 95 38 100 t d(on) - Nanoseconds C 48 VCE = 360V t d(on) - Nanoseconds I td(on) - - - - RG = 1Ω , VGE = 15V 100 95 120 1 50 tri 105 TJ = 150ºC, VGE = 15V t r i - Nanoseconds 160 t r i - Nanoseconds 120 115 MMIX1X200N60B3H1 Fig. 22. Typ. Forward characteristics Fig. 23. Typ. Reverse Recovery Charge Qrr vs. -diF/dt 200 20 180 18 TVJ = 150ºC 160 IF 16 TVJ = 25ºC 140 200A 14 TVJ = 150ºC 120 Qrr 100 [A] VR = 300V 12 [µC] 80 100A 10 60 8 40 6 20 4 1000 0 0 0.5 1 1.5 2 2.5 3 3.5 4 50A 1100 1200 1300 VF - [V] 1400 1500 1600 1700 Fig. 24. Typ. Peak Reverse Current IRM vs. -diF/dt 1900 Fig. 25. Typ. Recovery Time trr vs. -diF/dt 140 350 TVJ = 150ºC 200A VR = 300V TVJ = 150ºC 300 120 100A VR = 300V 250 100 trr IRM 200 50A [ns] [A] 80 200A 150 100A 60 40 1000 1800 -diF/ dt [A/µs] 100 1100 1200 1300 1400 1500 1600 1700 1800 1900 diF/dt [A/µs] 50 1000 50A 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] Fig. 26. Typ. Recovery Energy Erec vs. -diF/dt 5 TVJ = 150ºC VR = 300V 200A 4 Erec 3 100A [mJ] 2 50A 1 0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIX1X200N60B3(91) 6-13-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.