MMO110-12IO7

MMO 110 MLO 110 AC Controller Modules IRMS = 112 A VRRM = 800-1400 V Preliminary Data VRSM VDSM V 800 1200 1400 VRRM VDRM V 800 1200 1400 MMO 110-08io7 MMO 110-12io7 MMO 110-14io7 MLO 110-08io7 MLO 110-12io7 MLO 110-14io7 Type MMO (W1C) A G/F N I/H MLO (W1H) A G/F I/H Symbol IRMS ITRMS ITAVM ITSM Conditions TC = 85°C, 50 - 400 Hz, module TC = 85°C; (180° sine) TVJ = 45°C VR = 0 TVJ = 125°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 112 81 51 1000 1070 870 930 5000 4810 3780 3630 100 A A A A A A A A2s A2s A2s A2s A/µs Features • Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency • Isolation voltage 3000 V~ • Planar glass passivated chips • Low forward voltage drop • Lead suitable for PC board solering I2t TVJ = 45°C VR = 0 TVJ = 125°C VR = 0 Applications • Switching and control of single and three phase AC circuits • Light and temperature control • Softstart AC motor controller • Solid state switches (di/dt)cr TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs TVJ = 125°C; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = 125°C IT = ITAVM tp = 30 µs tp = 300 µs 500 1000 10 5 0.5 10 -40...+150 150 -40...+125 A/µs V/µs W W W V °C °C °C V~ V~ Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling • High power density • Small and light weight (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA Mounting torque (M4) typ. t = 1 min t=1s 2500 3000 1.5...2.0/14...18 Nm/lb.in. 18 g 1-2 © 2002 IXYS All rights reserved 241 Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. MMO 110 MLO 110 Symbol ID , IR VT VT0 rT VGT IGT VGD IGD IL IH tgd RthJC RthCH dS dA a Conditions TVJ = 125°C; VR = VRRM; VD = VDRM IT = 150 A; TVJ = 25°C Characteristic Values ≤ ≤ 5 1.57 0.85 5.6 ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ 1.5 1.9 100 200 0.2 1 200 100 2 0.8 0.4 typ. typ. 0.12 0.06 11.2 17.0 50 mA V V mΩ V V mA mA V mA mA mA µs K/W K/W K/W K/W mm mm m/s2 0.1 100 IGD, TVJ = 125°C 101 102 3 1 1 4 2 5 6 VG 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V For power-loss calculations only VD = 6 V VD = 6 V TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C TVJ = 125°C; VD = 2/3 VDRM TVJ = 25°C; tP = 10 µs IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = ½ VDRM IG = 0.45 A; diG/dt = 0.45 A/µs per thyristor; DC per module per thyristor; sine 180° el per module Creeping distance on surface Creepage distance in air Max. allowable acceleration 4: PGAV = 0.5 W 5: PGM = 5W 6: PGM = 10 W 103 IG mA 104 Fig. 1 Gate trigger characteristics 1000 TVJ = 25°C µs tgd typ. 100 Limit Dimensions in mm (1 mm = 0.0394") 10 1 10 100 IG mA 1000 Fig. 2 Gate trigger delay time © 2002 IXYS All rights reserved 2-2