MMO62-16IO6

MMO62-16io6 Thyristor VRRM = 1600 V I TAV = 30 A VT = 1.28 V AC Controlling 1~ full-controlled Part number MMO62-16io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO62-16io6 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 4 mA TVJ = 25°C 1.29 V 1.60 V 1.28 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 95 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. 1.68 V T VJ = 150 °C 30 A 66 A TVJ = 150 °C 0.87 V 13.6 mΩ 0.9 K/W 0.2 K/W TC = 25°C 140 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 22 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 150 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA 0.3 A; V = ⅔ VDRM non-repet., I T = 100 A/µs 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = 1.5 V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 20A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 15 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO62-16io6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MMO62-16io6 Equivalent Circuits for Simulation I V0 R0 Marking on Product MMO62-16io6 * on die level Delivery Mode Tube Code No. 459437 T VJ = 150°C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 11.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO62-16io6 Outlines SOT-227B (minibloc) 2 3 1 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO62-16io6 Thyristor 80 350 800 50 Hz, 80% VRRM VR = 0 V 300 60 600 TVJ = 45°C 250 IT 2 It ITSM 40 [A] 2 200 [A s] [A] 20 TVJ = 45°C 400 TVJ = 125°C TVJ = 125°C 200 125°C 150°C 150 TVJ = 25°C 0 0,4 100 0,8 1,2 1,6 0 2,0 0,01 0,1 10 t [ms] 2 TVJ = 25°C typ. 100 3 5 2 1 Limit 40 tgd 6 [A] [µs] 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 1 10 dc = 1 0.5 0.4 0.33 0.17 0.08 IT(AV)M 10 0,1 4 5 6 7 8 910 60 VG [V] 3 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 2 Fig. 2 Surge overload current 1000 1: IGT, TVJ = 125°C 1 t [s] VT [V] Fig. 1 Forward characteristics 1 100 1000 20 0 1 10 10000 IG [mA] Fig. 4 Gate trigger characteristics 100 0 1000 50 75 100 125 150 TC [°C] IG [mA] Fig. 5 Gate controlled delay time 60 25 Fig. 6 Max. forward current at case temperature 1,0 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.4 0.6 0.8 1.0 2.0 4.0 30 0,8 0,6 ZthJC [W] 0,4 20 Rthi [K/W] [K/W] 0.076 0.134 0.460 0.230 0,2 10 0 0 10 20 30 40 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2020 IXYS all rights reserved 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.0005 0.019 0.124 0.450 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c