MMO90-14IO6

MMO90-14io6 Thyristor VRRM = 1400 V I TAV = 50 A VT = 1.2 V AC Controlling 1~ full-controlled Part number MMO90-14io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO90-14io6 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1400 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1400 V TVJ = 25°C 100 µA TVJ = 125°C 10 mA IT = TVJ = 25°C 1.27 V 1.53 V 1.20 V IT = 50 A TVJ = 150 °C 50 A I T = 100 A I TAV average forward current TC = 95 °C I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1400 V I T = 100 A Ptot max. Unit 1500 V 1.50 V T VJ = 150 °C 50 A 110 A TVJ = 150 °C 0.88 V 6 mΩ 0.6 K/W 0.1 K/W TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 680 A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 A t = 10 ms; (50 Hz), sine TVJ = 45°C 3.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 3.12 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.31 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 2.25 kA²s 32 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 250 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 100 A/µs 50 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = 1.5 V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 50A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 15 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO90-14io6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MMO90-14io6 Equivalent Circuits for Simulation I V0 R0 Marking on Product MMO90-14io6 * on die level Delivery Mode Tube Code No. 485144 T VJ = 150°C Thyristor V 0 max threshold voltage 0.88 V R0 max slope resistance * 4.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO90-14io6 Outlines SOT-227B (minibloc) 2 3 1 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO90-14io6 Thyristor 120 700 3500 50 Hz, 80% VRRM 100 VR = 0 V 3000 600 80 2500 ITSM IT 60 I2t TVJ = 45°C 500 2000 [A] [A] [A s] 40 1500 400 125°C 150°C 20 0 0,4 TVJ = 25°C 0,8 1,2 TVJ = 125°C 500 2,0 0,01 0,1 1 1 5 2 2 TVJ = 25°C typ. 1 80 Limit IT(AV)M 60 [A] [µs] 4 40 10 20 4: PGAV = 0.5 W 0,1 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 1 10 100 1000 dc = 1 0.5 0.4 0.33 0.17 0.08 100 tgd 6 4 5 6 7 8 910 t [ms] 100 3 3 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 2 Fig. 2 Surge overload current 1000 1: IGT, TVJ = 125°C 1 t [s] VT [V] 10 TVJ = 125°C 1000 300 1,6 Fig. 1 Forward characteristics [V] TVJ = 45°C 2 0 1 10 10000 IG [mA] Fig. 4 Gate trigger characteristics 100 0 1000 25 50 75 100 125 150 TC [°C] IG [mA] Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 80 60 P(AV) RthHA 0.4 0.6 0.8 1.0 2.0 4.0 0,6 ZthJC 0,4 40 [K/W] [W] Rthi [K/W] 0.039 0.150 0.245 0.166 0,2 20 0 0 20 40 60 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2020 IXYS all rights reserved 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.0006 0.017 0.104 0.450 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c