VBO22-16NO8

VBO 22 Single Phase Rectifier Bridge VRSM VDSM VRRM VDRM V 800 1200 1400 1600 1800 V 800 1200 1400 1600 1800 IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C; VR = 0 I2t ~ - Maximum Ratings Features • Package with ¼" fast-on terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 380 440 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 360 400 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 725 800 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 650 650 As A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ • Easy to mount with one screw • Space and weight savings • Improved temperature & power cycling 2 ±10% 18 ±10% Nm lb.in. Dimensions in mm (1 mm = 0.0394“) 22 g 2 VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25°C TVJ = TVJM 0.3 5.0 mA mA VF IF = 150 A TVJ = 25°C 2.2 V VT0 rt For power-loss calculations only 0.85 12 V mW RthJC per diode; 120° el. per module per diode; 120° el. per module 8.20 2.05 9.40 2.35 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 dS dA a + 17 21 TVJ TVJM Tstg RthCH ~ ~ ~ VBO 22-08NO8 VBO 22-12NO8 VBO 22-14NO8 VBO 22-16NO8 VBO 22-18NO8 Conditions ­­- + Type Symbol IdAV = 21 A VRRM = 800-1800 V • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages 6.3 x 0.8 Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved Applications D B E A 20081024a 1-2 VBO 22 30 103 1.9 1.8 25 20 TVJ = 150°C 380 1.6 150°C 340 TVJ = 45°C 1.4 15 1.2 1.0 10 0 VRRM 0.8 5 ½ VRRM 0.6 1 VRRM 25°C 0 1 102 0.4 1.5 VF [V] 10 Fig. 1 Forward current versus voltage drop per diode 10 0 1 t [ms] 10 2 10 3 1 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 50 0.45 2 4 t [ms] 30 sin. 180° rec. 120° rec. 60° rec. 30° 70 20 90 TC [°C] 3.95 0 10 IFAVM [A] 110 10 DC sin. 180° rec. 120° rec. 60° rec. 30° 10 IdAV [A] 1.95 30 20 10 DC 0.05 = RthCA [K/W] 40 6 Fig. 3 I2t versus time (1-10 ms) per diode or thyristor 50 0.95 PVTOT [W] TVJ = 150°C A 2s IF(OV) / IFSM IF [A] IFSM [A] TVJ = 45°C 9.95 20 130 0 50 Tamb [K] 100 150 150 Fig. 4 Power dissipation vs. direct output current and ambient temperature 0 50 100 TC [°C] 150 200 Fig. 5 Maximum forward current at case temperature 10 ZthJK Zth [K/W] 8 ZthJC 6 4 2 0,01 0,1 t [s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20081024a 2-2