VBO36-08NO8

VBO 36 Three Phase Rectifier Bridge VRSM VDSM VRRM VDRM V 800 1200 1400 1600 1800 V 800 1200 1400 1600 1800 IdAV IdAVM TC = 85°C, module TC = 62°C, module IFSM TVJ = 45°C; VR = 0 I2t ~ - Maximum Ratings Features • Package with ¼" fast-on terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 550 600 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 500 550 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1520 1520 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1250 1250 As A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ • Easy to mount with one screw • Space and weight savings • Improved temperature & power cycling 2 ±10% 18 ±10% Nm lb.in. Dimensions in mm (1 mm = 0.0394“) 22 g 2 VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25°C TVJ = TVJM 0.3 2.0 mA mA VF IF = 150 A TVJ = 25°C 1.7 V VT0 rt For power-loss calculations only 0.8 5.8 V mW RthJC per diode; 120° el. per module per diode; 120° el. per module 6.20 1.55 7.40 1.85 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 dS dA a + 25 30 TVJ TVJM Tstg RthJH ~ ~ ~ VBO 36-08NO8 VBO 36-12NO8 VBO 36-14NO8 VBO 36-16NO8 VBO 36-18NO8 Conditions ­­- + Type Symbol IdAV = 30 A VRRM = 800-1800 V • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages 6.3 x 0.8 Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved Applications D B E A 20100303a 1-2 VBO 36 1.9 200 104 1.8 IFSM [A] TVJ = 45°C 150 TVJ = 150°C 480 1.6 500 100 1.2 A2s IF(OV) / IFSM IF [A] 1.4 103 45°C 1.0 150°C 0 VRRM 50 0.8 150°C 0.6 25°C 0 0.5 ½ VRRM 1 1.5 VF [V] 2 1 VRRM 0.4 100 2.5 Fig. 1 Forward current versus voltage drop per diode 101 t [ms] 102 102 103 Fig. 2 Surge overload current per diode IFSM: crest value, t: duration 70 0.36 = RthCA [K/W] 50 65 sin. 180° rec. 120° rec. 60° rec. 30° 20 10 0 10 IFAVM [A] 20 105 2.86 DC IdAV [A] 30 90 TC [°C] Ptot [W] 1.43 6 10 DC 75 40 4 t [ms] sin. 180° rec. 120° rec. 60° rec. 30° 40 0.71 50 2 Fig. 3 I2t versus time (1-10 ms) per diode or thyristor 50 60 1 30 20 120 10 7.14 135 0 50 Tamb 100 [K] 150 150 Fig. 4 Power dissipation vs. direct output current and ambient temperature 0 50 100 150 TC [°C] 200 Fig. 5 Maximum forward current at case temperature 8 ZthJK Zth [K/W] 6 ZthJC 4 2 0 0.01 0.1 t [s] 1 10 100 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100303a 2-2