VBO40-08NO6

VBO40-08NO6 3~ 1~ Rectifier Standard Rectifier VRRM = 800 V I DAV = 40 A I FSM = 320 A 1~ Rectifier Bridge Part number VBO40-08NO6 Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c VBO40-08NO6 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.15 V 1.33 V 1.07 V IF = 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 125 °C 1.31 V T VJ = 150 °C 40 A TVJ = 150 °C 0.81 V 12.1 mΩ d = 0.5 for power loss calculation only thermal resistance case to heatsink max. Unit 900 V VR = 800 V rectangular R thCH typ. VR = 800 V TC = 115 °C Ptot min. 1.3 K/W K/W 0.1 TC = 25°C 95 W t = 10 ms; (50 Hz), sine TVJ = 45°C 320 A t = 8,3 ms; (60 Hz), sine VR = 0 V 345 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 295 A t = 10 ms; (50 Hz), sine TVJ = 45°C 510 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 495 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 365 A²s 360 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 11 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191211c VBO40-08NO6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number VBO40-08NO6 Similar Part VBO40-12NO6 VBO40-16NO6 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO40-08NO6 Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 475866 Voltage class 1200 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c VBO40-08NO6 Outlines SOT-227B (minibloc) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 1 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c VBO40-08NO6 Rectifier 80 300 60 250 700 50 Hz 0.8 x V RRM VR = 0 V 600 500 IF IFSM 2 TVJ = 45°C It 200 40 [A] 400 [A] TVJ = 45°C [A2s] TVJ = 150°C TVJ = 150°C 300 TVJ = 125°C 150°C 20 150 200 TVJ = 25°C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 10-3 1.8 10-2 10-1 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 20 Ptot 16 10 Fig. 3 I2t vs. time per diode 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 24 1 t [ms] VF [V] 28 100 100 DC = 0.6 KW 1 0.8 KW 1 KW 2 KW 4 KW 8 KW 60 0.5 0.4 0.33 IF(AV)M 0.17 40 [W] 12 0.08 [A] 8 20 4 0 0 0 5 10 15 20 0 25 50 75 100 125 150 175 0 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.061 0.0002 2 0.145 0.0036 3 0.398 0.0200 4 0.405 0.1000 5 0.291 0.7000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c