VBO55-12NO7

VBO 55 IdAV = 55 A VRRM = 800-1600 V Single Phase Rectifier Bridge V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 A+ Types C~ E~ VBO 55-08NO7 VBO 55-12NO7 VBO 55-14NO7 VBO 55-16NO7 VBO 55-18NO7 B- Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t Maximum Ratings r TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M5) (10-32 UNF) Weight typ. A 750 820 A A 600 700 A A 2800 2820 A2s A2 s 2200 2250 A2 s A2 s -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ fo t = 1 min t=1s 5 ±15% 44 ±15% 110 t No Symbol 55 ne Symbol de si gn VRRM w VRSM Conditions Nm lb.in. g TVJ = 25°C TVJ = TVJM ≤ ≤ 0.5 10 mA mA VF IF TVJ = 25°C ≤ 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 6 V mΩ RthJC per diode; DC current per module per diode, DC current per module 1.3 0.325 1.6 0.4 K/W K/W K/W K/W 16.1 7.5 50 mm mm m/s2 RthJK dS dA a = 150 A; • • • • • Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop ¼" fast-on power terminals Applications • • • • Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight Dimensions in mm (1 mm = 0.0394") Characteristic Values VR = VRRM; VR = VRRM; IR Features Creeping distance on surface Creepage distance in air Max. allowable acceleration Recommended replacement: VBO65-##NO720070731a IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 316 Data according to IEC 60747 refer to a single diode unless otherwise stated. 20070731a 1-2 VBO 55 200 IF(OV) -----IFSM typ. 4 10 2 As IFSM (A) TVJ=45°C TVJ=150°C [A] 1.6 750 675 150 TVJ=45°C 1.4 1.2 100 10 3 TVJ=150°C 1 0 VRRM 50 0.8 Tvj = 150°C I F 1/2 VRRM 0.6 Tvj = 25°C 1 VRRM 0 1 1.5 VF [V] 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 10 0.4 2 0 10 1 t[ms] 10 2 10 3 2 1 2 4 t [ms] de si gn 0.5 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 85 TC PSB 51 0.3 0.17 175 = RTHCA [K/W] 90 95 0.42 100 150 60 [A] 50 105 125 40 0.67 DC sin.180° rec.120° rec.60° rec.30° 110 115 30 100 w 120 1.17 125 75 50 25 PVTOT 0 2.67 135 140 10 IdAV 145 0 °C 150 0 50 [A] 30 50 r 10 IFAVM 100 Tamb 150 50 100 TC(°C) 150 200 [K] fo Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature t K/W 20 130 ne DC sin.180° rec.120° rec.60° rec.30° No 2 Z thJK Z thJC 1 Z th 0.01 0.1 1 10 t[s] 316 Fig. 6 Transient thermal impedance per diode or thyristor, calculated 20070731a © 2003 IXYS All rights reserved 2-2