VMK90-02T2

Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 83 A ID80 TC = 80°C 62 A IDM TC = 25°C, tp = 10 ms, pulse width limited by TJM 330 A PD TC = 25°C, TJ = 150°C, 380 W -40 ... +150 °C TJM 150 °C Tstg -40 ... +125 °C TJ VISOL Md Weight 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) 2500 3000 V~ V~ 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. Typical including screws 90 g TO-240 AA E 72873 1 1, 3 = Drain, 5, 6 = Gate, ● ● ● ● ● ● ● Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA 200 VGS(th) VDS = VGS, ID = 3 mA 2 ● IGSS VGS = ±20 V DC, VDS = 0 500 nA IDSS VDS = 0.8 • VDSS, VGS = 0 V, TJ = 25°C VGS = 0 V, TJ = 125°C 400 mA 2 mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved V 4 V 25 mW 6 7 4 5 2 = Common Source 4, 7 = Kelvin Source Two MOSFET with common source International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 ceramic base plate Isolation voltage 3000 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin source contact Keyed twin plugs Applications ● VDSS 3 Features ● Symbol 2 ● ● Push-pull inverters Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) AC static switches Advantages ● ● ● ● Easy to mount with two screws Space and weight savings High power density Low losses 750 1 VDSS = 200 V ID25 = 83 A RDS(on) = 25 mW 1-4 VMK 90-02T2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), resistive load pF 1600 4500 pF 600 1500 pF 70 ns tf Qg Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S 9000 15000 td(on) TO-240 AA Outline 80 ns 200 ns 100 ns 380 450 nC 70 110 nC 190 230 nC Dimensions in mm (1 mm = 0.0394") 0.33 K/W RthJC RthJK with heat transfer paste dS Creepage distance on surface dA Strike distance through air a Max. allowable acceleration Source-Drain Diode 0.53 K/W 12.7 mm 9.6 mm m/s2 50 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS; VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % trr IF = IS, -di/dt = 100 A/ms, VDS = 100 V, VGS = 0 V IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 2000 IXYS All rights reserved 83 A 330 A 1.0 1.2 V 400 750 ns 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 VMK 90-02T2 ID 200 200 A 175 175 9V 8V 150 VDS = 30 V A VGS = 10 V ID TJ = 25°C 150 7V 125 125 100 100 6V 75 75 50 50 5V 25 TJ = 125°C 25 0 0 0 1 2 3 4 5 V V 0 6 1 2 3 4 5 6 7 V Fig. 1 Typical output characteristics ID = f (VDS) 1.4 R Fig. 2 Typical transfer characteristics ID = f (VGS) 2.50 normalized to RDS(on) @0.5 ID25, VGS = 10V 1.3 8 VGS DS R ID = 45 A DS(on) 2.25 norm. 2.00 DS(on) norm. 1.2 V GS 1.75 = 10 V 1.50 1.1 1.25 1.0 V GS = 15 V 0.9 1.00 0.75 0.8 0 25 50 75 100 ID 125 A 150 0.50 -50 -25 0 25 50 75 100 125 °C 150 TJ Fig. 3 Typical normalized RDS(on) = f (ID) 100 Fig. 4 Typical normalized RDS(on) = f (TJ) 1.2 A ID 80 VGS(th) VDSS 1.1 norm. 60 1.0 40 0.9 20 0.8 0 0 25 50 75 100 125 °C 150 TC Fig. 5 Continuous drain current ID = f (TC) © 2000 IXYS All rights reserved VDSS VGS(th) 0.7 -50 -25 0 25 50 75 100 °C 125 150 TJ Fig. 6 Typical normalized VDSS = f (TJ), VGS(th) = f (TJ) 3-4 VMK 90-02T2 10 1000 V VGS VDS = 100 V ID = 40 A IG = 2 mA 8 A ID Limited by RDS(on) t = 1 ms 100 6 t = 10 ms 4 10 2 0 1 0 100 200 300 nC 400 t = 100 ms TK = 25°C TJ = 150°C non-repetitive 1 10 V 100 Qg 1000 VDS Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Forward Safe Operating Area, ID = f (VDS) 200 100 A nF 150 Ciss 10 IS C 100 Coss TJ = 125°C 1 0.1 0 5 10 15 TJ = 25°C 50 Crss 0 0 0.00 20 V 25 VDS Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz 100 s 0.25 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 1 K/W D = 0.5 g 80 fs D = 0.2 0.1 60 ZthJK D = 0.1 D=0.05 D=0.02 40 0.01 D = single pulse 20 0 0 20 40 60 80 100 A 120 ID Fig. 11 Typical transconductance gfs = f (ID) © 2000 IXYS All rights reserved 0.001 0.001 0.01 0.1 1 s 10 t Fig. 12 Transient thermal resistance ZthJK = f (tp) 4-4