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VMM45-02F

VMM45-02F

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO240AA

  • 描述:

    MOSFET 2N-CH 200V 45A TO-240AA

  • 详情介绍
  • 数据手册
  • 价格&库存
VMM45-02F 数据手册
VMM 45-02F Preliminary VDSS = 200 V ID25 = 45 A RDS(on) = 45 mΩ Dual Power HiPerFET™ Module Phaseleg Configuration High dv/dt, Low trr, HDMOS™ Family Part number VMM45-02F 1 1 = Drain 1, 3 = Source 2, 5 = Gate 1 2 = Source 1, Drain 2 4 = Kelvin Source 1 6 = Gate 2 5 4 2 6 3 Features / Advantages: Applications: Package: TO-240AA • Two MOSFET's in phaseleg configuration • Direct copper bonded Al2O3 ceramic base plate • Low RDS(on) HDMOSTM process • Easy to mount with two screws • Space and weight savings • High power density • Low losses • Switched-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • Isolation Voltage: 4800 V~ • Industry standard outline • RoHS compliant • Soldering pins for PCB mounting • Base plate: DCB ceramic • Reduced weight • Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions © 2020 IXYS All rights reserved 20200727a 1-4 VMM 45-02F Preliminary HiPerFET™s Ratings Symbol Definitions VDSS drain source breakdown voltage Conditions min. VDGR drain gate voltage RGS = 10 kΩ VGS VGSM gate source voltage max. transient gate source voltage Continuous Transient ID25 ID80 IDM continuous drain current drain current maximum pulsed drain current tp = 10 µs, pulse width limited by TJM Ptot total power dissipation TC = 25°C VDSS drain source breakdown voltage VGS = 0 V; ID = 1 mA 200 VGS(th) gate threshold voltage VDS = VGS; ID = 4 mA 2 IGSS gate source leakage current VGS = ±20 V DC; VDS = 0 IDSS drain source leakage current VDS = VDSS; VGS = 0 V VDS = 0.8 • VDSS; VGS = 0 V TVJ = 25°C TVJ = 125°C RDS(on) staticdrain source on resistance VGS = 10 V; ID = 0.5 • ID25 TVJ = 25°C typ. max. Unit TVJ = 25°C to125°C 200 V TVJ = 25°C to125°C 200 V ±20 ±30 V V 45 34 180 A A A 190 W TC = 25°C TC = 80°C TC = 25°C V 4 39 V 500 nA 15 1 µA mA 45 mΩ Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % gfs forward transconductance VDS = 10 V; ID = 0.5 • ID25 pulsed Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz td(on) tr td(off) tf turn-on delay time current rise time turn-off delay time current fall time VGS = 10 V; VDS = 0.5 • VDSS; ID = 0.5 • ID25 RG = 1 Ω (external), resistive load 40 45 300 45 Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VGS = 10 V; VDS = 0.5 • VDSS; ID = 0.5 • ID25 190 35 45 225 55 115 RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heat transfer paste 0.93 0.63 K/W K/W 20 30 4800 900 310 Source-Drain Diodes S 7500 2250 750 pF pF pF ns ns ns ns nC nC nC Ratings Symbol Definitions Conditions IS continuous source current VGS = 0 V ISM maximum pulsed source current Repetitive; pulse width limited by TJM VSD forward voltage drop IF = IS; VGS = 0 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr reverse recovery time IF = IS, -di/dt = 100 A/µs VDS = 100 V; VGS = 0 V min. typ. max. 45 A 180 A 0.9 1.2 V 200 400 ns Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. TJ = 25°C, unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions © 2020 IXYS All rights reserved 20200727a 2-4 VMM 45-02F Preliminary Package TO-240AA Ratings Symbol Definitions Conditions IRMS RMS current per terminal TVJ virtual junction temperature TVJM maximum virtual junction temperature Tstg storage temperature min. -40 -40 Weight MD MT dSpp/App dSpb/Apb VISOL typ. max. Unit 200 A 150 °C 150 °C 125 °C 81 mounting torque terminal torque 2.5 2.5 creepage distance on surface | striking distance through air isolation voltage t = 1 second t = 1 minute IXYS reserves the right to change limits, test conditions and dimensions © 2020 IXYS All rights reserved g 4 4 Nm Nm terminal to terminal 13.0 9.7 mm terminal to backside 16.0 16.0 mm 50/60 Hz, RMS, IISOL < 1 mA 4800 V 4000 V 20200727a 3-4 VMM 45-02F Preliminary Outlines TO-240AA Dimensions in mm (1 mm = 0.0394") 1 5 4 2 6 3 IXYS reserves the right to change limits, test conditions and dimensions © 2020 IXYS All rights reserved 20200727a 4-4
VMM45-02F
物料型号:VMM 45-02F 器件简介:这款模块属于IXYS ALitelus技术,是双功率HiPerFET™模块,采用相腿配置,适用于高dv/dt、低trr的HDMOS™家族。 引脚分配:1 = 漏极1,2 = 源极1/漏极2,3 = 源极2,4 = 凯尔文源极1,5 = 栅极1,6 = 栅极2。 参数特性:包括击穿电压VDSS为200V,连续漏极电流ID25为45A,导通电阻RDS(on)为45毫欧等。 功能详解:模块具有4800V的隔离电压,符合行业标准外形,符合RoHS标准,适用于开关模式和共振模式的电源供应,以及不间断电源供应(UPS)。 应用信息:适用于开关模式和共振模式的电源供应,以及UPS。 封装信息:采用TO-240AA封装,具有简化的重量,先进的功率循环能力。
VMM45-02F 价格&库存

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