VUB116-16NO1

VUB 116-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.76 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 3.5 V = 67 A Preliminary data Part name (Marking on product) VUB116-16NO1 10+11 12 13 19+20 u t NTC 1 E72873 e -o ~ 6+7 ~ 4+5 ~ 2+3 18 17 21+22 Features: h a s 8+9 p • Soldering connections for PCB mounting • Convenient package outline • Optional NTC Application: Package: • Drive Inverters with brake system • kage • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability • UL registered, E72873 Recommended replacement: VUB 116-16NOXT IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101007a 1-6 VUB 116-16NO1 IGBT Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current DC DC Ptot total power dissipation VCE(sat) min. typ. TVJ = 25°C to 150°C max. Unit 1200 V +20 +30 V V TC = 25°C TC = 80°C 95 67 A A TC = 25°C 380 W collector emitter saturation voltage IC = 100 A; VGE = 15 V TVJ = 25°C 3.5 V VGE(th) gate emitter threshold voltage IC = 8 mA TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V VCE = 0.8·VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 3.8 nF td(on) td(off) Eon Eoff turn-on delay time turn-off delay time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 125°C VCE = 720 V; IC = 50 A VGE = ±15 V; RG = 22 W; L = 100 µH 150 680 6 4 ns ns mJ mJ ICM VCEK reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 22 W; L = 100 µH clamped inductive load; TVJ = 125°C tSC (SCSOA) short circuit safe operating area VCE = 720 V; VGE = ±15 V; RG = 22 W; non-repetitive TVJ = 125°C 10 µs RBSOA reverse bias safe operating area VCE = 1200 V; VGE = ±15 V; TVJ = 125°C RG = 22 W; L = 100 µH; clamped inductive load 100 A RthJC thermal resistance junction to case 0.33 K/W RthCH thermal resistance case to heatsink -20 -30 6.45 V 0.1 0.5 mA mA A V 100 < VCES-LS·dI /dt e -o u t 4.5 K/W s 0.33 Ratings a Fast Recovery Diode Definitions VRRM max. repetitive reverse voltage Conditions TVJ = 150°C 1200 V IFAV average forward current rect.; d = 0.5 TC = 80°C 27 A IFRMS rms forward current rect.; d = 0.5 TC = 80°C 38 A IFSM max. surge forward current t = 10 ms TVJ = 45°C 200 A Ptot total power dissipation TC = 25°C 130 W VF0 rF threshold voltage slope resistance TVJ = 150°C for power loss calculation only 1.3 16 V mW VF forward voltage IF = 30 A TVJ = 25°C 2.76 V IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.25 mA mA 11 A 0.9 K/W p h Symbol min. typ. 1 IRM reverse recovery current IF = 50 A; VR = 100 V; diF /dt = -100 A/µs 5.5 IF = 1 A; VR = 30 V; diF /dt = -200 A/µs 40 trr reverse recovery time RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink max. 0.1 Unit ns K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101007a 2-6 VUB 116-16NO1 Rectifier Diode Symbol Conditions Ratings min. typ. max. VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V IR reverse current VR = VRRM TVJ = 25°C TVJ = 150°C 0.1 2 mA mA VF forward voltage IF = 80 A TVJ = 25°C 1.43 V ID(AV)M max. average DC output current rectangular; d = /3; bridge TC = 80°C 116 A VF0 rF threshold voltage slope resistance TVJ = 150°C for power loss calculation only 0.85 7.1 V mW RthJC thermal resistance junction to case per diode TVJ = 25°C 0.65 K/W RthCH thermal resistance case to heatsink TVJ = 25°C 0.1 K/W Ptot total power dissipation TVJ = 25°C 190 W IFSM max. forward surge current t = 10 ms (50Hz) VR = 0 V TVJ = 45°C TVJ = 150°C 700 610 A A I2t value for fusing t = 10 ms (50Hz) VR = 0 V TVJ = 45°C TVJ = 150°C 2450 1860 A2s A2s Ratings typ. max. Unit -o u t 1 Temperature Sensor NTC Definitions Conditions R25 B25/85 resistance min. TC = 25°C 4.75 5.0 3375 5.25 kW K s e Symbol a Module Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; (M5) min. p h Symbol Md mounting torque dS dA a creep distance on surface strike distance through air maximum allowable acceleration Rpin-chip thermal resistance pin to chip Ratings typ. max. Unit 125 150 125 °C °C °C 2500 3000 V~ V~ 3.3 Nm -40 -40 t = 1 min. t=1s 2.7 12.7 9.6 50 Weight TVJ = 25°C mm mm m/s2 2 mW 180 g TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101007a 3-6 VUB 116-16NO1 Dimensions in mm (1 mm = 0.0394“) p h a s e -o u t Outline Drawing Product Marking Ordering Part Name Standard VUB 116-16NO1 Marking on Product Delivering Mode Base Qty Ordering Code VUB116-16NO1 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Box 6 496855 20101007a 4-6 VUB 116-16NO1 150 104 400 TVJ = 125°C 120 IF TVJ = 45°C TVJ = 25°C 300 2 It 90 IFSM [A] 2 [A s] 200 60 TVJ = 150°C [A] TVJ= 45°C 100 30 TVJ= 150°C 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 2.0 0 0.001 0.01 VF [V] 0.1 103 1 1 2 3 Fig. 1 Forward current vs. voltage drop per diode 4 5 6 7 89 t [ms] t [s] 2 Fig. 3 I t versus time per diode t Fig. 2 Surge overload current 160 u 400 -o 300 Ptot [W] e 200 20 40 60 80 100 100 0 20 40 40 20 60 0 80 100 120 140 0 20 40 60 80 100 120 140 Tamb [°C] TC [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180° p 1 80 [A] 60 h IdAVM [A] a 0 120 IdAV s 100 0 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W 140 0.1 ZthJC [K/W] 0.01 0.001 0.01 0.1 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved τi Ri 0.085 0.012 0.041 0.007 0.309 0.036 0.215 0.102 1 20101007a 5-6 VUB 116-16NO1 120 TVJ = 25°C 100 TVJ = 100°C 150°C 60 15 50 TVJ = 125°C 80 IC 20 70 IF 40 VGE [A] 30 [V] 60 10 [A] 40 20 20 10 VGE = 15 V 1 2 3 4 5 TVJ = 25°C 0 1 2 VCE [V] 800 td(off) VCE = 600 V VGE = ±15 V 12 10 600 400 t Eoff [ns] 500 800 600 Eoff 4 1000 400 t [ns] 200 2 s Eoff tf 20 40 60 IC [A] 80 0 100 0 a 0 400 1200 td(off) 6 [mJ] e [mJ] 300 Fig. 9 Typ. turn on gate charge VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C 8 RG = 22 Ω TVJ = 125°C 2 200 -o 4 100 QG [nC] Fig. 8 Typ. forward characteristics of free wheeling diode 8 Eoff 0 VF [V] Fig. 7 Typ. output characteristics 6 0 3 t 0 0 u 0 VCE = 600 V IC = 50 A 5 200 tf 0 20 40 60 80 100 0 120 RG [Ω] Fig. 11 Typ. turn off energy and switching times versus gate resistor p h Fig. 10 Typ. turn off energy and switching times versus collector current 101 10000 diode 100 IGBT 10-1 ZthJC 10 R -2 [Ω] [K/W] 1000 10-3 single pulse 10-4 10-5 10-4 10-3 10-2 10-1 100 101 t [s] Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 100 0 25 50 75 100 125 150 T [°C] Fig. 13 Typ. thermistor resistance vs. temperature 20101007a 6-6