VUB120-16NOXT

VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 = 180 A I FSM = 1100 A VCE(sat) = 1.7 V 3~ Rectifier Bridge + Brake Unit Part number VUB120-16NOX Backside: isolated M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages: Applications: Package: V2-Pack ● Package with DCB ceramic base plate ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● X2PT - 2nd generation Xtreme light Punch Through ● Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VUB120-16NOX Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 100 µA TVJ = 125°C 2 mA IF = TVJ = 25°C 1.16 V 1.55 V 1.09 V IF = 60 A TVJ = 125 °C 60 A I F = 180 A bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 90 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.59 V T VJ = 150 °C 180 A TVJ = 150 °C 0.81 V 4.4 mΩ d=⅓ for power loss calculation only Ptot V VR = 1600 V I F = 180 A I DAV max. Unit 1700 V 0.6 K/W 0.2 K/W TC = 25°C 205 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5.89 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.37 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 4.25 kA²s 37 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220h VUB120-16NOX Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 180 A TC = 80 °C 140 A 500 W 2.1 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C =100 A t d(on) turn-on delay time TC = 25°C I C = 100 A; V GE = 15 V TVJ = 25°C 1.7 TVJ = 125°C 1.9 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C inductive load 6.8 TVJ = 125°C VGE = ±15 V; R G = 6.8 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 720 V; VGE = ±15 I SC short circuit current RG = 6.8 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 V 0.1 mA 0.1 mA nA 340 nC 230 ns 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ TVJ = 125°C VCEK = 1200 V I CM V 500 VCE = 600 V; IC = 100 A VGE = ±15 V; R G = 6.8 Ω 6 max. Unit 1200 V TVJ = 125°C 300 A 10 µs A 450 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 48 A TC = 80 °C 32 A TVJ = 25°C 2.75 V TVJ = 25°C 0.25 mA TVJ = 125°C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/µs trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 600 V 30 A; VGE = 0 V TVJ = 125°C 1.60 V 5.2 µC 50 A 300 ns 1.9 mJ 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220h VUB120-16NOX Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) yywwAA Part Number Lot.No: xxxxxx UL Date code Prod. Index Ordering Standard Ordering Number VUB120-16NOX Similar Part VUB120-16NOXT Equivalent Circuits for Simulation I V0 R0 Marking on Product VUB120-16NOX Package V2-Pack * on die level Rectifier Brake Diode V 0 max threshold voltage 0.81 1.31 R0 max slope resistance * 3.2 8 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Delivery Mode Box Quantity 6 Code No. 520475 Voltage class 1600 T VJ = 150°C V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VUB120-16NOX Outlines V2-Pack Marking Remarks: EJOT PT® self-tapping screws of the dimension K25 are recommended for the mechanical connection between module and PCB. Choose the right length according to your board thickness at a maximum depth of 6 mm of the module holes. The recommended mounting torque is 1.5 Nm. M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VUB120-16NOX Rectifier 200 10 4 900 TVJ = 125°C TVJ = 25°C 800 IF IFSM TVJ= 45°C TVJ = 45°C 150 2 700 It 600 [A s] TVJ= 150°C 100 [A] [A] 2 50 TVJ = 150°C 500 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 400 0.001 2.0 0.01 VF [V] 0.1 10 3 1 1 2 t [s] Fig. 1 Forward current vs. voltage drop per diode 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 3 I t vs. time per diode 140 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 40 20 20 0 0 0 10 20 30 40 50 60 70 0 20 40 IF(AV)M [A] 60 80 100 120 140 160 0 25 50 Tamb [°C] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 ZthJC 0.3 [K/W] 0.2 0.1 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.040 0.004 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 10000 t [s] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VUB120-16NOX Brake IGBT + Diode 200 200 150 13 V VCE = 20 V 150 150 25°C IC 200 VGE = 19 V 17 V 15 V IC 125°C 100 11 V TVJ = 150°C IC 100 100 [A] [A] [A] 125°C 50 50 50 25°C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VCE [V] 400 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 30 3 6 4 7 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 40 300 td(on) Eon tr 20 200 [mJ] [ns] 10 11 12 13 Eoff 60 500 50 400 t t d(off) 30 40 300 [mJ] [ns] tf 20 200 IF 30 [A] 125°C 20 tr 10 9 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT 50 8 VGE [V] VCE [V] Fig.1 Output characteristics IGBT 40 2 100 10 100 10 25°C Eon 0 0 0 50 100 150 0 200 0 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 80 RG = 6.8 Ohm VR = 600 V TVJ = 125°C I rr 6 Eoff Erec Irr 4 40 [A] [mJ] 100 150 200 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 2.5 2.0 60 Erec 0 10 20 30 40 50 0 60 1.5 2.0 2.5 1 100 Erec IGBT 1.5 75 [mJ] ZthJC Irr 1.0 50 0.1 [K/W] [A] 20 Erec 1.0 Diode 0.5 0 0.5 VF [V] Fig. 6 Typ. forward characteristics Diode 125 TVJ = 125°C VR = 600 V IF = 30 A Irr 2 0 0.0 0 50 25 0.0 4 8 12 16 20 0 24 0.01 0.001 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 0.01 Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 0.1 1 IF [A] RG [Ohm] t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h