VUB135-22NO1

VUB135-22NO1 High Voltage Standard Rectifier Module 3~ Rectifier Brake Chopper VRRM = 2200 V VCES = 1700 V I DAV = 150 A I C25 = 113 A I FSM = 1100 A VCE(sat) = 1.9 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB135-22NO1 Backside: isolated 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 41 40 48+49 Features / Advantages: Applications: Package: E2-Pack ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Phase Change Material available Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VUB135-22NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 IR reverse current VF forward voltage drop min. typ. VR = 2200 V TVJ = 25°C 100 µA TVJ = 150°C 2 mA IF = TVJ = 25°C 1.20 V 1.68 V 1.13 V IF = 50 A TVJ = 125 °C 50 A I F = 150 A TC = 105 °C bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.74 V T VJ = 150 °C 150 A TVJ = 150 °C 0.79 V 6.4 mΩ d=⅓ for power loss calculation only Ptot V VR = 2200 V I F = 150 A I DAV max. Unit 2300 V 0.5 K/W 0.1 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5.89 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.37 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 4.25 kA²s 37 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220g VUB135-22NO1 Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 113 A TC = 80 °C 80 A 445 W 2.13 V TVJ = collector emitter voltage I C80 TC = 25°C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 900 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; V GE = 15 V TVJ = 25°C 1.9 TVJ = 125°C 2.8 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C 5.8 6.4 V 0.6 mA 0.6 mA TVJ = 125°C 75 A VGE = ±15 V; R G = 18 Ω VGE = ±15 V; R G = 18 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1700 V VCE = 900 V; VGE = ±15 I SC short circuit current RG = 18 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 850 nC 250 ns 70 ns 670 ns 420 ns 29 mJ 17 mJ TVJ = 125°C VCEK = 1700 V I CM V 400 inductive load VCE = 900 V; IC = 5.2 max. Unit 1700 V TVJ = 125°C 150 A 10 µs A 340 0.28 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1700 V I F25 forward current TC = 25°C 75 A TC = 80 °C 50 A TVJ = 25°C 3.05 V TVJ = 25°C 0.1 mA TVJ = 125°C 6 mA I F80 VF forward voltage I F = 60 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/µs trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 900 V 60 A; VGE = 0 V TVJ = 125°C 2.20 V 18 µC 70 A 900 ns 8 mJ 0.65 K/W 0.25 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220g VUB135-22NO1 Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 40 Unit A -40 150 °C -40 125 °C 125 °C 176 Weight MD 3 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 6 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Barcode XXXXXXXXXX yywwZ Logo UL Part Number Date Code Location Ordering Standard Ordering Number VUB135-22NO1 Marking on Product VUB135-22NO1 Delivery Mode Box Quantity 6 Code No. 503948 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 kΩ R K [ ] 104 103 Equivalent Circuits for Simulation I V0 R0 * on die level T VJ = 150°C Rectifier 102 0 V 0 max threshold voltage 0.79 V R0 max slope resistance * 3.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VUB135-22NO1 Outlines E2-Pack D A 17 ±0,5 20,6 ±0,5 3,5 ±0,5 Ø6 Vor der Montage typ. 100 µm konvex über 75 mm Before mounting typ. 100 µm convex over 75 mm Ø 2,5 -0,3 Ø 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 ±0,2 15° ±1° 6 Detail A 0,8 ±0,05 1,2 ±0,05 93 ±0,2 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 C 61,74 65,55 Index 41,90 46 32 ±0,2 Ø 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 ±0,2 65,55 69,36 23,64 27,45 79,2 107,5 ±0,3 Bemerkung / Note: - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 41 40 48+49 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VUB135-22NO1 Rectifier 200 10 4 900 TVJ = 125°C TVJ = 25°C 800 IF IFSM TVJ= 45°C TVJ = 45°C 150 2 700 It 600 [A s] TVJ= 150°C 100 [A] [A] 2 50 TVJ = 150°C 500 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 400 0.001 2.0 0.01 VF [V] 0.1 10 3 1 1 2 t [s] Fig. 1 Forward current vs. voltage drop per diode 3 4 5 6 7 8 91 0 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 3 I t vs. time per diode 140 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 40 20 20 0 0 0 10 20 30 40 50 60 70 0 20 IdAVM [A] 40 60 80 100 120 140 160 0 25 50 Tamb [°C] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 ZthJC 0.3 i Rth (K/W) ti (s) [K/W] 1 0.040 0.004 0.2 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 0.1 0.0 1 10 100 1000 10000 t [s] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VUB135-22NO1 Brake IGBT + Diode 140 120 120 100 125°C IC 80 100 11 V TVJ = 125°C IC 80 [A] 60 [A] 60 40 40 20 20 0 [A] 60 9V 40 1 2 0 1 2 3 6 4 400 RG = 18 Ohm 300 tr 40 200 40 800 30 Eoff 400 [ns] 10 RG = 18 Ohm VCE = 900 V VGE = ±15 V TVJ = 125°C Eoff 0 0 40 80 10 10 8 80 Irr [A] 4 20 0 20 40 60 [A] 20 0 0.0 Erec 0.5 1.0 1.5 2.0 2.5 3.0 VF [V] Fig. 6 Typ. forward characteristics Diode 1 200 Diode 160 120 [mJ] Erec 0 60 0 160 6 40 2 125°C 200 60 [mJ] 25°C Erec Irr 6 120 TVJ = 125°C VR = 900 V IF = 60 A 100 8 IF IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current RG =18 Ohm VR = 900 V TVJ = 125°C 120 t tf 20 0 160 120 13 600 Eon 80 12 40 100 0 11 100 tr 20 10 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT [ns] [mJ] [mJ] 9 80 Eon 40 8 VGE [V] td(off) td(on) 0 7 VCE [V] VCE = 900 V VGE = ±15 V TVJ = 125°C 60 25°C 0 3 Fig.1 Output characteristics IGBT 80 125°C 20 VCE [V] Erec 80 0 0 VCE = 20 V 140 13 V 17 V 15 V 120 25°C 100 IC VGE = 19 V 140 0 80 100 120 140 4 80 Irr ZthJC IGBT [K/W] [A] Irr 2 0 10 20 30 40 40 0 50 Diode Ri ti 0.010 0.001 0.050 0.001 0.240 0.021 0.350 0.090 0.1 1 10 100 IGBT Ri ti 0.010 0.001 0.030 0.008 0.120 0.045 0.070 0.100 1000 10000 IF [A] RG [Ohm] t [ms] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g