VUB50-12PO1

Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features Input Rectifier D1 - D6 Conditions Maximum Ratings 1200/1600 TC = 100°C; sine 180° TC = 100°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz Ptot TC = 25°C Symbol Conditions VF IF = 45 A; TVJ = 25°C TVJ = 125°C IR VR = VRRM; TVJ = 25°C VR = 0.8 • VRRM; TVJ = 125°C per diode; rectangular 120° with heat transfer paste 90 Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 DC; TC = 25°C DC; TC = 80°C p 1.6 V V 0.2 0.4 mA mA 1.8 1.45 K/W K/W drives with • mains input • DC link • inverter or chopper feeding the machine • motor and generator/brake operation Conditions VF IF = 10 A; TVJ = 25°C TVJ = 125°C IR VR = VRRM; 1200 V 15 10 A A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2.6 1.9 3.0 V V 0.06 0.06 mA mA 13 110 A ns 5 3.5 K/W K/W 214 Symbol RthJC RthJH 1.3 1.2 Applications Maximum Ratings h Symbol IRM trr W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. s Chopper Diode D A A A a RthJC RthJH 22 56 300 V -o IFAV IDAVM IFSM e VRRM • three phase mains rectifier • brake chopper: - IGBT with low saturation voltage - HiPerFREDTM free wheeling diode • module package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate u Symbol t 1200 1600 D3 1-2 VUB 50 Dimensions in mm (1 mm = 0.0394") Chopper Transistor T Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 DC; TC = 25°C DC; TC = 80°C ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA; L = 100 µH; clamped inductive load Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.4 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C A A 20 VCES A RthJC RthJH with heat transfer paste V V u 2.7 6.5 V 0.5 mA mA -o 0.8 nA 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ 600 45 pF nC 2.7 1.4 K/W K/W e VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 10 A a Module h Conditions Maximum Ratings -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2 14 - 18 Nm lb.in. IISOL ≤ 1 mA; 50/60 Hz; t = 1 sec p Md 18 14 2.3 2.7 s Cies QGon VISOL V 200 Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω TVJ Tstg ± 20 4.5 td(on) tr td(off) tf Eon Eoff Symbol V Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE = 0 V; VGE = ± 20 V IGES 1200 t Symbol Mounting torque (M5) Symbol Conditions Characteristic Values min. typ. max. dA, dS pin to heatsink 11.2 Weight © 2002 IXYS All rights reserved mm 24 g 2-2