VUB72-12NO1

VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 11 12 1 2 D1 D3 NTC D5 4 5 D 11 12 T D2 D4 D6 6 7 Features Input Rectifier D1 - D6 Conditions Maximum Ratings VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz Ptot TC = 25°C Symbol Conditions 1200 1600 A A A u 40 110 530 V V -o 100 W IR VR = VRRM; TVJ = 25°C VR = 0.8 • VRRM; TVJ = 125°C s TVJ = 25°C TVJ = 125°C a IF = 25 A; e Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF 1.0 0.9 1.1 V V 0.02 mA mA 0.4 Applications drives with • mains input • DC link • inverter or chopper feeding the machine • motor and generator/brake operation 1.2 K/W 1.42 K/W h per diode with heat transfer paste • three phase mains rectifier • brake chopper: - IGBT with low saturation voltage - HiPerFREDTM free wheeling diode • module package: - high level of integration - solder terminals for PCB mounting - UL registered E72873 - isolated DCB ceramic base plate - large creepage and strike distances - high reliability t Symbol p Chopper Diode D Symbol Conditions Maximum Ratings VRRM TVJ = 25°C to 150°C IF25 IF80 DC; TC = 25°C DC; TC = 80°C Symbol Conditions VF IF = 25 A; TVJ = 25°C TVJ = 125°C 2.7 2.0 IR VR = VRRM; TVJ = 25°C TVJ = 125°C IRM t rr IF = 15A; diF/dt = -400 A/µs VR = 600 V; TVJ = 125°C RthJC RthJH with heat transfer paste 1200 V 25 15 A A Characteristic Values min. typ. max. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 3.1 V V 0.1 0.1 mA mA 16 130 A ns 2.3 K/W 3.12 K/W 0623 RthJC RthJH 9 10 1-4 VUB 72 Chopper Transistor T Equivalent Circuits for Simulation Maximum Ratings TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 DC; TC = 25°C DC; TC = 80°C 50 35 A A ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; L = 100 µH 50 A tSC (SCSOA) VGE = ±15 V; VCE = 900 V; TVJ = 125°C RG = 39 Ω; non repetitive VCES Characteristic Values min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C nA 80 50 440 50 3.8 2.0 ns ns ns ns mJ mJ 2.0 150 nF nC s Dimensions in mm (1 mm = 0.0394") 4,6 R2 a 35 63 50 14 ±0,3 14 ±0,3 7 ±0,3 7 ±0,3 4x45° IRMS per pin Maximum Ratings 100 A -40...+150 -40...+125 °C °C 3600 V~ 2 - 2.5 Nm IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M5) Symbol Conditions dA, dS Weight © 2006 IXYS All rights reserved Characteristic Values min. typ. max. 5 ±1 5 4 3 23,5 ±0,1 5,5 10 ±0,3 0,5 +0,2 Ø0,5 8,3 ±1 VISOL ±0,15 51,5 15,8 TVJ Tstg 2 15 25,75 0,5 26 31,6 mm 35 g 0623 Conditions 3,3 ±0,5 Symbol 2 Module R 9 kΩ K 6 2.2 3560 7 ) R 1 298K 5,5 ( 1T R(T) = R25 • e B25/100 11 ±0,3 1 R1 8 h Characteristic Values typ. 11 ±0,3 T = 25°C ±0,2 38,6 p R25 B25/100 ±1 5 ±1 0.6 K/W 1.2 K/W with heat transfer paste, see mounting instructions Conditions Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.25 V; R0 = 32 mΩ mA mA -o VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 35 A IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.0 V; R0 = 45 mΩ u 0.1 0.1 T/D V 200 Cies QGon Temperature Sensor NTC V V 6.5 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 Ω Symbol 2.4 4.5 td(on) tr td(off) tf Eon Eoff RthJC RthJH 1.9 2.1 e IGES µs Diode (typ. at TJ = 125°C) V0 = 0.85 V; R0 = 7 mΩ t Symbol Conditions (TVJ = 25°C, unless otherwise specified) 10 D1 - D6 13 VCES Conduction 17 ±0,25 Conditions 0,25 Symbol 2-4 VUB 72 Input Rectifier D1-D6 80 500 A A 70 typ. 400 60 IF IFSM TVJ= 25°C 50 VR= 0.8VRRM 300 TVJ=150°C TVJ= 45°C 40 max. 200 30 20 100 10 TVJ= 150°C 0.5 1.0 VF Fig. 1 0 0.001 1.5 V 2.0 0.01 0.1 t Forward current vs. voltage drop per rectifier diode s 1 Fig. 2 Surge overload current per rectifier diode t 0 0.0 10000 u 80 A 70 VR= 0 V -o A2s 60 Id(AV)M 50 40 TVJ= 45°C I2t e TVJ= 150°C 30 100 s 20 a 10 0 0 40 80 1 140 ms 10 t Fig. 4 I2t versus time per rectifier diode Maximum forward current vs. heatsink temperature (Rectifier bridge) p Fig. 3 10 120 °C 160 h TH W 120 RthHA [K/W] Note: Transient thermal impedance see next page 0.5 1 1.5 2 3 4 6 100 Ptot 1000 80 60 40 20 0 10 20 30 Id(AV)M Fig. 5 40 50 60 A 0 70 40 80 120 °C 160 TA Power dissipation vs. direct output current and ambient temperature (Rectifier bridge) © 2006 IXYS All rights reserved 0623 0 3-4 VUB 72 Chopper T - D 120 50 VGE = 15 V A A 100 IC TVJ = 25°C IF 80 TVJ = 125°C 40 TVJ = 125°C 30 60 20 40 TVJ = 25°C 10 20 0 0 0 1 2 3 4 5 0 6 V 7 1 2 3 V 4 VF VCE Fig. 7 Typ. forward characteristics of free wheeling diode t Fig. 6 Typ. IGBT output characteristics mJ Eoff RG = 39 Ω TVJ = 125°C Eoff 4 1200 ns 1000 800 4 mJ t Eoff 800 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C u VCE = 600 V VGE = ±15 V 3 ns 600 t -o 6 Eoff 600 2 400 e td(off) 2 400 td(off) 1 200 s 200 tf 0 20 40 60 0 A 80 tf 10 a 0 0 20 30 40 IC h Fig. 9 Typ. IGBT turn off energy and switching times versus gate resistor p 10 0 70 Ω 80 60 RG Fig. 8 Typ. IGBT turn off energy and switching times versus collector current K/W 50 Temperature Sensor NTC 10000 1 ZthJC Ω chopper diode rectifier diode IGBT 0.1 1000 R 0.01 100 0.001 single pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t 0 20 40 60 80 100 120 140 °C T Fig. 11 Typ. thermistorresistance versus temperature 0623 Fig. 10Typ. transient thermal impedance 10 -20 © 2006 IXYS All rights reserved 4-4