VUB72-12NOXT

VUB72-12NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1200 V VCES = 1200 V I DAV = I FSM = 75 A I C25 = 58 A 600 A VCE(sat) = 1.85 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB72-12NOXT Backside: isolated 6 11 12 10 NTC 1~ 7~ 9~ 5 2 4 Features / Advantages: Applications: Package: V1-A-Pack ● Package with DCB ceramic base plate ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e VUB72-12NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.10 V 1.38 V 1.01 V IF = 25 A IF = 75 A IF = 25 A IF = 75 A TVJ = 125 °C 1.37 V T VJ = 150 °C 75 A TVJ = 150 °C 0.79 V 7.7 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 110 °C Ptot min. 1.1 K/W 0.3 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 600 A t = 8,3 ms; (60 Hz), sine VR = 0 V 650 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 510 A t = 8,3 ms; (60 Hz), sine VR = 0 V 550 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.80 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.76 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.30 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.26 kA²s 19 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220e VUB72-12NOXT Ratings Brake IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 58 A TC = 80 °C 40 A 195 W 2.15 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 2 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 35 A t d(on) turn-on delay time TC = 25°C IC = 35 A; V GE = 15 V TVJ = 25°C 1.85 TVJ = 125°C 2.15 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C 5.9 6.5 V 0.1 mA 0.1 mA TVJ = 125°C 35 A VGE = ±15 V; R G = 27 Ω VGE = ±15 V; R G = 27 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 900 V; VGE = ±15 I SC short circuit current RG = 27 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 110 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ 4.1 mJ TVJ = 125°C VCEK = 1200 V I CM V 500 inductive load VCE = 600 V; IC = 5.4 max. Unit 1200 V TVJ = 125°C 105 A 10 µs A 140 0.65 K/W K/W 0.25 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 31 A TC = 80 °C 21 A TVJ = 25°C 2.97 V TVJ = 25°C 0.1 mA TVJ = 125°C 0.5 mA I F80 VF forward voltage I F = 25 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 600 V 400 A/µs 25 A; VGE = 0 V TVJ = 125°C 2.43 V 1.2 µC 18 A 130 ns 1.6 K/W 0.55 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220e VUB72-12NOXT Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD creepage distance on surface | striking distance through air d Spb/Apb VISOL g 2 mounting torque d Spp/App typ. t = 1 minute Date Code Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage 2.5 50/60 Hz, RMS; IISOL ≤ 1 mA Prod. Index yywwA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number VUB72-12NOXT Marking on Product VUB72-12NOXT Similar Part VUB72-16NOXT Package V1-A-Pack Delivery Mode Blister Quantity 24 Code No. 515901 Voltage class 1600 7000 Temperature Sensor NTC 6000 Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient I R0 2.13 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.79 1.1 1.16 R0 max slope resistance * 6.5 40 43 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved typ. 2.2 3560 Equivalent Circuits for Simulation V0 min. max. Unit 5000 2.27 kΩ 4000 R 3000 [ ] 2000 K T VJ = 150°C 1000 0 0 V mΩ 50 100 150 TC [°C] Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e VUB72-12NOXT Outlines V1-A-Pack 4,6 15,8 ±1 0,5 +0,2 ±1 3,6 ±0,5 5 ±1 Ø 0,5 ±0,25 35 26 63 31,6 2 17 13 max. 0,25 8,3 ±0,1 R2 52 (see 1) Ø 6,1 Ø 2,5 1,5 *7 *14 ±0,3 *0 11,75 *7 ±0,3 *14 12,2 11,75 = 5,5 = 1x45° 3 4 5 8 9 10 15 6 2 7 4 1 6 *11 5,5 *0 Ø 2,1 *11 6 0,5 *14 *7 25 *0 *7 *14 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 ±0,3 1 ±0,2 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm  2 +0,2  6 11 12 10 NTC 1~ 7~ 9~ 5 2 4 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e VUB72-12NOXT Rectifier 500 100 2000 50 Hz 0.8 x V RRM 80 1600 400 IF VR = 0 V 60 I 2t TVJ = 45°C IFSM 1200 TVJ = 45°C 2 [A] [A s] [A] 40 TVJ = 150°C 300 TVJ = 125°C 150°C 20 TVJ = 150°C 800 400 TVJ = 25°C 0 0.4 0.8 1.0 1.2 1.4 200 10-3 1.6 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 24 Ptot 10 2 Fig. 3 I t vs. time per diode 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 1 t [ms] VF [V] 32 [W] 0.6 DC = 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 80 0.5 0.4 IF(AV)M 60 0.33 0.17 16 [A] 40 8 20 0 0.08 0 0 4 8 12 16 20 24 28 32 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 1.0 0.8 ZthJC Constants for ZthJC calculation: 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.0607 0.0004 2 0.1230 0.00256 3 0.2305 0.0045 4 0.4230 0.0242 5 0.2628 0.1800 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e VUB72-12NOXT Brake IGBT 70 70 70 13 V VGE = 15 V VGE = 15 V 17 V 19 V 11 V 60 60 50 50 50 IC 40 IC 40 IC 40 60 TVJ = 25°C [A] 30 [A] 30 TVJ = 125°C 20 [A] 30 9V 20 20 TVJ = 125°C 10 TVJ = 125°C 10 0 10 0 0 1 2 3 TVJ = 25°C 0 0 1 2 3 4 5 5 6 7 8 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 10 IC = 35 A VCE = 600 V 8 VGE E 10 11 12 13 Fig. 3 Typ. tranfer characteristics 6 Eon RG = 27 VCE = 600 V VGE = ±15 V TVJ = 125°C 15 9 VGE [V] Eoff 6 IC = 35 A VCE = 600 V VGE = ±15 V TVJ = 125°C 5 Eon E 10 [V] [mJ] [mJ] 4 Eoff 4 5 2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 80 3 20 40 60 80 QG [nC] IC [A] RG [ ] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 0.1 ZthJC [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e VUB72-12NOXT Brake Diode 3.0 40 35 30 IF VR = 800 V 40 2.0 25 Qrr 1.5 20 [A] TVJ = 125°C VR = 800 V 2.5 TVJ = 25°C 100°C 150°C 50 TVJ = 125°C [μC] 15 IF = 30 A IRM 30 IF = 15 A IF = 7.5 A [A] 20 IF = 30 A IF = 15 A IF = 7.5 A 1.0 10 10 0.5 5 0 0 1 2 VF [V] 3 0 0.0 100 4 0 1000 200 diF /dt [A/μs] Fig. 1 Forward current IF versus VF Fig. 3 Typ. peak reverse current IRM versus diF /dt Fig. 2 Typ. reverse recov. charge Qr versus diF /dt 2.0 180 1.5 400 600 800 1000 diF /dt [A/μs] 120 1.2 TVJ = 125°C TVJ = 125°C VR = 800 V IF = 15 A VR = 800 V 160 80 trr Kf 1.0 140 [ns] IRM 0.8 IF = 30 A VFR tfr IF = 15 A IF = 7.5 A [V] [µs] 40 0.5 0.4 120 Qr 0.0 100 0 40 80 120 160 0 200 400 600 800 1000 diF /dt [A/μs] TVJ [°C] Fig. 4 Dynamic parameters Qr, I RM versus TVJ tfr VFR 0 0 200 400 600 0.0 800 1000 -d i F /dt [A/μs] Fig. 5 Typ. recovery time trr versus diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 10 1 ZthJC 0.1 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e