VUC25-16GO2

VUC 25 IdAVM = 28 A ITAVM = 26 A VRRM = 1200-1600 V Three Phase Rectifier Bridge with Fast Diodes and "Softstart" Thyristor V V 1300 1500 1700 1200 1400 1600 Type VUC 25-12go2 VUC 25-14go2 VUC 25-16go2 Conditions IdAV IdAVM ITAVM TK = 85°C; module module TK = 85°C; (DC) IFSM, ITSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 3 5 8 Maximum Ratings Diode Thyristor 26 A A A 300 330 330 370 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 300 300 330 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 460 545 575 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 380 450 460 A2s A2s 150 A/μs 500 A/μs 200 V/μs 10 V 10 1 0.5 W W W -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 28 Nm lb.in. g a s e -o 25 28 - TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 μs VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = ITAVM diG/dt = 0.3 A/μs (dv/dt)cr p h (di/dt)cr 1 6 7 TVJ = TVJM IT = ITAVM tp = 30 μs tp = 10 ms ≤ ≤ PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. 6 7 8 Features • Package with DCB ceramic base plate • Isolation voltage 3600 V~ • Planar passivated chips • Fast recovery diodes to reduce EMI • Separate thyristor for softstart • Solderable terminals • UL registered E 72873 Applications • Input rectifier for switching power supplies (SMPS) • Softstart capacitor charging • Electric drives and auxiliaries Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature & power cycling • Up to 10 dB lower EMI/RFI compared to standard rectifier Dimensions in mm (1 mm = 0.0394") TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) VRGM PGM 4 3 2 5 Symbol I2t 1 t VRRM VDRM 4 u VRSM VDSM 2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20091201a 1-2 VUC 25 Symbol Conditions IR, ID VR = VRRM; VD = VDRM VF, VT IF = 55 A; IT = 45 A, TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) VGT IGT VD = 6 V; VD = 6 V; TVJ = 25°C TVJ = 25°C ≤ ≤ 1.5 80 V mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ 0.2 5 V mA IL TVJ = 25°C; tG = 30 μs IG = 0.3 A; diG/dt = 0.3 A/μs ≤ 300 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/μs ≤ 2.5 μs tq TVJ = 125°C; IT = 15 A, tp = 300 μs, -di/dt = 10 A/μs VR = 100 V, dv/dt = 20 V/μs, VD = 2/3 VDRM typ. 130 trr TVJ = 25°C; IF = 10 A; -di/dt = 10 A/μs, VR = 1/2 VRRM RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module ≤ 5 ≤ 0.3 ≤ ≤ 5 0.3 mA mA ≤ 2.2 ≤ 1.5 V ≤ 1.5 Creeping distance on surface Creepage distance in air Max. allowable acceleration t μs - μs 0.9 1.1 - K/W K/W K/W K/W -o 2.3 0.38 2.9 0.48 1.1 V 11 mΩ u 1.2 18 7 mm 7 mm 50 m/s2 p h a s dS dA a TVJ = TVJM TVJ = 25°C e RthJH Characteristic Values Diode Thyristor IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20091201a 2-2