VUE130-12NO7

VUE 130-12NO7 Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2 Preliminary data sheet IdAV = 130 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Typ PS16 ~A 1 ~L 9 ~ K10 EG 1 VUE 130-12NO7 Pin arangement see outlines B3 Symbol IdAV ① IdAVM IFSM Conditions TC = 70°C, module TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 130 90 500 525 415 440 1250 1160 860 820 -40...+150 150 -40...+125 A A A A A A A2 s A2 s A2s A2 s °C °C °C V~ V~ Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Space and weight savings • Improved temperature and power cycling capability • Small and light weight • Low noise switching Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthCH IRM trr a dS dA 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M4) typ. Conditions VR = VRRM VR = VRRM IF = 60 A TVJ = 25°C TVJ = TVJM TVJ = 25°C 1.5-2/14-18 Nm/lb.in. 24 g Characteristic Values typ. max. 1 2.5 2.7 mA mA V for power-loss calculations only per diode; DC current per diode, DC current, typ. IF = 130 A, -diF/dt = 100 A/µs VR = 100 V, TVJ = 100°C IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C Max. allowable acceleration creeping distance on surface (pin to heatsink) strike distance in air (pin to heatsink) 7 40 1.07 V 8.2 mΩ 0.8 K/W 0.2 K/W 15 A ns m/s2 mm mm 50 11.2 9.7 Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 1-2 241 VUE 130-12NO7 100 A 80 IF 60 TVJ = 150°C TVJ = 100°C TVJ = 25°C 10 µC Qr 8 TVJ = 100°C VR = 600 V 100 A 80 IRM IF = 30 A IF = 15 A IF = 7.5 A IF = 30 A TVJ = 100°C VR = 600 V 6 60 IF = 15 A IF = 7.5 A 40 4 40 20 2 20 0 0 1 2 VF DWLP55-12 V 3 0 100 DWLP55-12 A/µs 1000 -diF/dt 0 0 200 400 DWLP55-12 600 A/µs 1000 800 -diF/dt B3 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 280 ns TVJ = 100°C VR = 600 V Fig. 3 Peak reverse current IRM versus -diF/dt 120 tfr TVJ = 100°C VR = 15 A VFR 2,0 1,2 µs tfr 0,8 V VFR 80 1,5 Kf 1,0 IRM trr 240 IF = 30 A IF = 15 A IF = 7.5 A 200 0,5 Qr 40 0,4 DWLP55-12 0,0 0 40 80 TVJ DWLP55-12 160 0 200 400 600 -diF/dt DWLP55-12 120 C 160 800 A/µs 1000 0 0 200 400 0,0 600 A/µs 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W ZthJC Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0,1 0,01 0,0001 VUE130-12 0,001 0,01 0,1 1 t s 10 Fig. 7 Typical transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 241 IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2-2