VUI30-12N1

VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typ. Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~ fT = 15 kHz TC = 80°C Preliminary data Part name (Marking on product) VUI30-12N1 2 D3 D1 10 9 5 5 1 2 T 6 6 9 10 D2 D4 1 Features: Application: Package: • NPT IGBT with low saturation voltage • Fast recovery epitaxial diodes (FRED) Three phase rectifier with power factor correction, set up as follows: • input from three phase mains - wide range of input voltage - mains currents approx. sinusoidal in phase with mains voltage - topology permits to control overcurrent such as in case of input voltage peaks • output - direct current link - buck type converter - reduced output voltage - possibility to supply boost converter, inverter etc. • required components - one power semiconductor module per phase - one inductor and one capacitor per phase on mains side - output inductor, depending on supplied circuit • High level of integration • Solder terminals for PCB mounting • Isolated DCB ceramic base plate • Large creepage and strike distances IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130111b 1-3 VUI 30-12 N1 Transistor T Symbol Definitions Conditions min. VCES collector emitter voltage VGES DC gate voltage continuous IC25 IC80 collector current DC DC TC = 25°C TC = 80°C VCE(sat) collector emitter saturation voltage IC = 20 A; VGE = 15 V TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse Cies Ratings typ. max. Unit 1200 V +20 V 95 65 A A 2.0 V 6.5 V 1.6 mA mA 400 nA TVJ = 25°C to 150°C -20 1.7 1.9 4.5 1.8 VCE = 0 V; VGE = ±20 V inductive load TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 22 W; L = 100 µH 100 70 500 70 3.0 2.2 ns ns ns ns mJ mJ input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 3.3 nF 240 nC QGon total gate charge VCE = 600 V; VGE = 15 V; IC = 50 A ICM VCEK reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 22 W; L = 100 µH clamped inductive load; TVJ = 125°C tSC (SCSOA) short circuit safe operating area VCE = VCES; VGE = ±15 V; RG = 22 W; non-repetitive RthJC thermal resistance junction to case RthJH thermal resistance case to heatsink A V 100 < VCES-LS·dI /dt TVJ = 125°C with heat transfer paste, see mounting instructions 10 µs 0.3 K/W 0.6 K/W Diodes D1 - D4 Symbol Conditions Ratings min. typ. max. VRRM repetitive reverse voltage TVJ = 25°C 1200 V IF25 IF80 collector current TC = 25°C TC = 80°C 40 25 A A IR reverse current VR = VRRM VR = 0.8·VRRM TVJ = 25°C TVJ = 125°C 0.75 2 mA mA VF forward voltage IF = 20 A TVJ = 25°C TVJ = 125°C 2.2 1.9 2.4 V V IRM trr reverse recovery current reverse recovery time IF = 30 A; diF /dt = -250 A/µs VR = 540 V TVJ = 125°C 16 400 RthJC thermal resistance junction to case per diode TVJ = 25°C RthJH thermal resistance case to heatsink with heat transfer paste TVJ = 25°C IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved A ns 1.3 2.6 K/W K/W 20130111b 2-3 VUI 30-12 N1 Module Symbol Definitions Conditions TVJ Tstg operating temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; Md mounting torque (M5) dS; dA creep distance on surface / through air min. Ratings typ. max. Unit -40 -40 150 125 °C °C 3600 V~ 2.5 Nm t = 1 min 2 5 Weight mm 35 Outline Drawing g Dimensions in mm (1 mm = 0.0394“) marking Product Marking Ordering Part Name Standard VUI30-12N1 Marking on Product Delivering Mode Base Qty Ordering Code VUI30-12N1 IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Box 10 487554 20130111b 3-3