VUM24-05N

VUM 24-05N ID25 = 35 A VDSS = 500 V RDS(on) = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 24-05N 5 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ Continuous ID ID IDM MOSFET Symbol Maximum Ratings 24 35 95 A A A 170 W 24 95 A A TS = 85°C, rectangular δ = 0.5 600 40 V A TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 260 280 A A • Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters • Boost topology for SMPS including 1~ rectifier bridge • Power supply for welding equipment 36 W Advantages TS = 85°C, sinus 180° 800 40 V A TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 260 280 A A 33 W -40...+150 150 -40...+150 °C °C °C • 3 functions in one package • Output power up to 5 kW • No external isolation • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability • Fits easiliy to all available PFC controller ICs 3000 3600 V~ V~ TS = 85°C TS = 25°C TS = 25°C, tp = ① VGS = 0 V, TS = 25°C VGS = 0 V, TS = 25°C, tp = ① Boost Diode IS ISM VRRM IdAV IFSM TS = 85°C Rectifier Diodes P TVJ TJM Tstg VISOL Md TS = 85°C Module P Features V V V TS = 85°C IFSM 7 8 500 500 ±20 PD VRRM IdAV 6 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M5) Weight • Package with DCB ceramic base plate • Soldering connections for PCB mounting • Isolation voltage 3600 V~ • Low RDS(on) HDMOSTM process • Low package inductance for high speed switching • Ultrafast boost diode • Kelvin source for easy drive Applications 2-2.5/18-22 Nm/lb.in. 28 g IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 20070605c ① Pulse width limited by TVJ 1-4 VUM 24-05N Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 2 mA VDS = 20 V, ID = 20 mA 5 V V IGSS VGS = ±20 V, VDS = 0 V ±500 nA IDSS VDS = 500 V, VGS = 0 V 2 mA RDS(on) RGint TVJ = 25°C TVJ = 25°C 0.12 1.5 Ω Ω 1.5 S V 100 220 ns ns gfs VDS td(on) td(off) MOSFET VDSS VGS(th) VDS = 15 V, IDS = 24 A, 500 2 IDS = 12 A VGS = 0 V 30 VDS = 250 V, IDS = 12 A, VGS = 10 V Zgen. = 1 Ω, L-load Ciss Coss Crss VDS = 25 V, f = 1 MHz, VGS = 0 V nF nF nF 350 nC 0.38 K/W VDS = 250 V, ID = 12 A, with heat transfer paste VF IF = 22 A; TVJ = 25°C TVJ =150°C 1.65 1.4 V V IR VR VR = 600 V, TVJ = 25°C = 480 V, TVJ = 25°C TVJ =125°C 1.5 0.25 7 mA mA mA Boost Diode Qg RthJH VT0 rT IRM VGS = 10 V 8.5 0.9 0.3 For power-loss calculations only TVJ = 125°C IF VR = 30 A; -diF/dt = 240 A/μs = 350 V, TVJ = 100°C 1.14 V 10 mΩ 10 11 A with heat transfer paste 1.8 K/W VF IF = 20 A, TVJ = 25°C TVJ =125°C 1.4 1.4 V V VR VR = 800 V TVJ = 25°C = 640 V, TVJ =125°C 0.25 2 mA mA IR VT0 rT RthJH Rectifier Diodes RthJH For power-loss calculations only TVJ = 125°C with heat transfer paste 350 A V = 0.8V R RRM 300 250 IFSM TVJ= 45°C 200 150 100 TVJ= 125°C 50 0 0.001 0.01 t 0.1 s 1 Fig. 1 Non-repetitive peak surge current (Rectifier Diodes) 500 A2s 400 300 TVJ= 45°C I2t 200 TVJ= 125°C 100 0 1 t ms 10 Fig. 2 I2t for fusing (Rectifier Diodes) 1.05 V 16 mΩ 2 K/W IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 20070605c Dimensions in mm (1 mm = 0.0394") 2-4 VUM 24-05N 80 A 70 60 6V ID 50 ID 50 40 40 30 RDS(on) ID=18A 2.0 7V 60 2.5 80 A 70 10 V VGS= 5 V norm. 1.5 TVJ = 25°C TVJ = 125°C 1.0 30 20 20 10 10 0.5 0 0 0 2 4 6 8 V 10 2 3 4 VDS 6 V 7 0.0 -50 VGS Fig. 3 Typ. output characteristic ID = f (VDS) (MOSFET) Fig. 4 Typ. transfer characteristics ID = f (VGS) (MOSFET) 1.4 BVDSS VGS(th) 1.2 5 12 Fig. 5 Typ. normalized RDS(on) = f (TVJ) (MOSFET) nF 10 VDS= 250 V VDSS ID = 18 A 8 VGS 1.0 norm. 100 °C 150 50 100 V VGS(th) 0 TVJ Ciss 10 IG = 10 mA C 6 0.8 Coss 1 4 0.6 2 0.4 -50 0 0 100 °C 150 50 Crss 0.1 0 100 TVJ Fig. 6 Typ. normalized BVDSS = f (TVJ) VGS(th) = f (TVJ) (MOSFET) 200 Qg 300 nC 400 0 5 10 15 V 20 VDS Fig. 7 Typ. turn-on gate charge characteristics, VGS = f (Qg) (MOSFET) Fig. 8 Typ. capacitances C = f (VDS), f = 1 MHz (MOSFET) 80 120 3.0 s A μC 100 2.5 80 Qrr 2.0 TVJ=100°C VR= 350 V max. 60 gfs IF 40 TVJ=150°C 60 IF = 37 A IF = 74 A TVJ=100°C 1.5 IF = 37 A IF = 18.5 A TVJ= 25°C 40 1.0 20 0.5 20 typ. 0 20 40 60 80 A 100 0 0.5 ID Fig. 9 Typ. transconductance, gfs = f (ID) (MOSFET) 1.5 VF 2.0 V 2.5 Fig. 10 Forward current versus voltage drop (Boost Diode) IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 1.0 0.0 10 100 -diF/dt A/μs 1000 Fig. 11 Recovery charge versus -diF/dt (Boost Diode) 20070605c 0 3-4 VUM 24-05N 1.4 50 A TVJ=100°C VR= 350 V 40 VR= 350 V 0.5 1.2 max. trr Kt IF = 74 A 30 TVJ=100°C μs IF = 37 A IRM 0.6 0.4 IF = 37 A IF = 37 A max. 1.0 IF = 74 A 0.3 IRM IF = 18.5 A IF = 37 A 0.8 20 IF = 18.5 A 0.2 typ. 10 Qr 0.6 0.1 typ. 0.4 20 0 0 100 200 300 400 -diF/dt A/μs 600 500 Fig. 12 Peak reverse current versus -diF/dt (Boost Diode) 18 V 16 60 80 100 120 140 °C 160 TTVJ J Fig. 13 Dynamic parameters versus junction temperature (Boost Diode) μs 0.7 VFR 0 100 200 300 400 A/μs 500 600 -diF/dt Fig. 14 Recovery time versus -diF/dt (Boost Diode) 7 kW TS =85°C 6 8 kW TS =85°C 7 0.9 14 VFR 12 0.0 40 6 Pout 5 5 Vin = 230 V/50 Hz fc = 40 kHz Pout 4 10 4 0.5 3 8 3 Vin = 115 V/60 Hz 6 tFR tFR 4 2 0 100 200 0 40 60 80 100 kHz 120 Fig. 16 Output power versus carrier frequency (Module) 2.5 K/W fc = 80 kHz 20 50 100 V 200 150 Vin (RMS) 250 Fig. 17 Output power versus mains voltage VUM 24 2.0 ZthJC 4 Pout 0 fc 6 Vin = 230 V/50 Hz 0 0 kW 5 fc = 80 kHz 1 1 0.1 300 400 A/μs 500 600 diF/dt Fig. 15 Peak forward voltage versus -diF/dt (Boost Diode) 2 2 0.3 Rectifier Diodes 1.5 Boost Diode 3 Vin = 115 V/60 Hz 1.0 2 60 80 100 °C 120 0.0 0.01 TS Fig. 18 Output power versus heatsink temperature (Module) 1 s 10 t Fig. 19 Transient thermal impedance junction to case for all devices IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 0.1 20070605c 0 40 MOSFET 0.5 1 4-4