VUM25-05E

Advanced Technical Information VUM 25-05 Rectifier Module for Three Phase Power Factor Correction Using fast recovery epitaxial diodes and MOSFET 1 VDSS = 500 V ID25 = 35 A RDS(on) = 0.12 W 5 1 2 3 VRRM (Diode) V 600 VDSS V Type 5 6 9 10 9 6 2 10 500 VUM 25-05E 3 Symbol VDSS VDGR VGS MOSFET Test Conditions TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous TS = 85°C TS = 25°C TS = 25°C, tp = x TS = 85°C VGS = 0 V, TS = 25°C VGS = 0 V, TS = 25°C, tp = x TS = 85°C, rectangular d = 0.5 Diodes Maximum Ratings 500 500 ±20 24 35 95 170 24 95 600 40 300 320 260 280 36 -40...+150 150 -40...+150 V V V A A A W Features q Package with DCB ceramic base plate Soldering connections for PCB mounting Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Ultrafast diodes Kelvin source for easy drive q ID ID IDM PD IS ISM VRRM IdAV IFSM q q q q A A V A A A A A W °C °C °C V~ V~ q Applications q TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TS = 85°C Three phase input rectifier with power factor correction consisting of three modules VUM 25-05 q For power supplies, UPS, SMPS, drives, welding etc. P TVJ TJM Tstg Module Advantages q Reduced harmonic content of input currents corresponding to standards Rectifier generates maximum DC power with a given AC fuse Wide input voltage range No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability VISOL Md Weight 50/60 Hz IISOL £ 1 mA Mounting torque (M5) t = 1 min t=1s 3000 3600 q 2-2.5/18-22 Nm/lb.in. 35 g q q q q q x Pulse width limited by TVJ IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 826 VUM 25-05 Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 500 2 V V nA mA W W S V ns ns nF nF nF nC 0.38 K/W 1.65 1.4 1.5 0.25 7 V V mA mA mA Dimensions in mm (1 mm = 0.0394") VDSS VGS(th) IGSS IDSS RDS(on) RGint gfs VDS td(on) td(off) Ciss Coss Crss Qg RthJS VF IR Diodes MOSFET VGS = 0 V, ID = 2 mA VDS = 20 V, ID = 20 mA VGS = ±20 V, VDS = 0 V VDS = 500 V, VGS = 0 V TVJ = 25°C TVJ = 25°C VDS = 15 V, IDS = 24 A, IDS = 12 A VGS = 0 V 5 ±500 2 0.12 1.5 30 1.5 100 220 8.5 0.9 0.3 350 VDS = 250 V, IDS = 12 A, VGS = 10 V Zgen. = 1 W, L-load VDS = 25 V, f = 1 MHz, VGS = 0 V VDS = 250 V, ID = 12 A, IF VR VR = 22 A; TVJ = 25°C TVJ = 150°C VGS = 10 V = 600 V, TVJ = 25°C = 480 V, TVJ = 25°C TVJ = 125°C VT0 rT IRM RthJS For power-loss calculations only TVJ = 125°C IF VR = 30 A; -diF/dt = 240 A/ms = 350 V, TVJ = 100°C 10 1.14 V 10 mW 11 A 1.8 K/W © 2000 IXYS All rights reserved 2-4 VUM 25-05 80 A 70 60 ID 50 40 30 20 10 0 0 2 4 VDS 6 10 V 7V 6V 80 A 70 60 ID 50 40 TVJ = 25°C TVJ = 125°C 2.5 RDS(on) ID=18A 2.0 norm. 1.5 VGS= 5 V 30 20 1.0 0.5 10 0 8 V 10 2 3 4 VGS 5 6 V7 0.0 -50 0 TVJ 50 100 °C 150 Fig. 1 Typ. output characteristic ID = f (VDS) (MOSFET) 1.4 BVDSS VGS(th) 1.2 VGS(th) VDSS Fig. 2 Typ. transfer characteristics ID = f (VGS) (MOSFET) 12 V 10 8 VDS= 250 V ID = 18 A IG = 10 mA 6 Fig. 3 Typ. normalized RDS(on) = f (TVJ) (MOSFET) 100 nF 10 C Ciss 1.0 norm. 0.8 VGS Coss 4 1 0.6 2 0 0 100 200 Qg 300 nC 400 0.1 0 5 10 VDS 15 Crss 0.4 -50 0 TVJ 50 100 °C 150 V 20 Fig. 4 Typ. normalized BVDSS = f (TVJ) VGS(th) = f (TVJ) (MOSFET) 80 s 60 gfs Fig. 5 Typ. turn-on gate charge characteristics, VGS = f (Qg) (MOSFET) 120 A 100 80 IF 60 40 Fig. 6 Typ. capacitances C = f (VDS), f = 1 MHz (MOSFET) 3.0 µC 2.5 Qrr 2.0 1.5 1.0 0.5 typ. 0.0 10 TVJ=100°C VR= 350 V max. TVJ=150°C TVJ=100°C TVJ= 25°C IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A 40 20 20 0 0 20 40 60 ID 80 A 100 0 0.5 1.0 1.5 VF 2.0 V 2.5 100 -diF/dt A/ms 1000 Fig. 7 Typ. transconductance, gfs = f (ID) (MOSFET) Fig. 8 Forward current versus voltage drop (Diodes) Fig. 9 Recovery charge versus -diF/dt (Diodes) 826 © 2000 IXYS All rights reserved 3-4 VUM 25-05 50 A TVJ=100°C VR= 350 V 40 IRM 30 IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A max. Kt 1.4 0.6 µs 1.2 trr 1.0 IRM 0.8 0.2 typ. Qr 0.1 0.3 0.5 0.4 TVJ=100°C VR= 350 V max. 20 IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A 10 0.6 typ. 0 0 100 200 300 400 -diF/dt 500 s 600 A/m 0.4 20 0.0 40 60 80 100 120 140 160 °C TJ TVJ 0 100 200 300 400 A/ms 600 500 -diF/dt Fig. 10 Peak reverse current versus -diF/dt (Diodes) 18 V 16 14 VFR 12 10 8 6 4 2 0 100 200 tFR 0.3 VFR 0.5 0.9 Fig. 11 Dynamic parameters versus junction temperature (Diodes) Fig. 12 Recovery time versus -diF/dt (Diodes) 2.5 K/W 2.0 VUM 25 ms 0.7 ZthJC 1.5 Diode 1.0 0.5 tFR MOSFET 0.0 0.01 0.1 1 t s 10 0.1 300 400 A/ms 600 500 diF/dt Fig. 13 Peak forward voltage versus -diF/dt (Diodes) Fig. 14 Transient thermal impedance junction to case for all devices © 2000 IXYS All rights reserved 4-4