VUM33-05N

VUM 33-05 Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) V 600 VDSS V 500 VUM 33-05N Type 5 13 278 46 ID25 = 47 A VDSS = 500 V RDS(on) = 0.12 W 1 2 34 Symbol VDSS VDGR VGS MOSFET Test Conditions TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous TS = 85°C TS = 25°C TS = 25°C, tp = x TS = 85°C VGS = 0 V, TS = 25°C VGS = 0 V, TS = 25°C, tp = x TS = 85°C, rectangular d = 0.5 TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TS = 85°C TS = 85°C, sinus 180° TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TS = 85°C Maximum Ratings 500 500 ±20 33 47 130 310 33 130 600 33 300 320 260 280 59 800 54 300 320 260 280 50 -40...+150 150 -40...+150 V V V A A A W A A V A A A A A q 5 6 78 Features q q ID ID IDM PD IS ISM VRRM IFAV IFSM q q q q q Package with DCB ceramic base plate Soldering connections for PCB mounting Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Ultrafast boost diode Kelvin source for easy drive Boost Diode Applications q P VRRM IdAV IFSM W q Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters Boost topology for SMPS including 1~ rectifier bridge Power supply for welding equipment Rectifier Diodes V A Advantages A A A A W °C °C °C V~ V~ q q q q q q P TVJ TJM Tstg VISOL Md Weight q 3 functions in one package Output power up to 8 kW No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Fits easiliy to all available PFC controller ICs Module 50/60 Hz IISOL £ 1 mA Mounting torque (M5) t = 1 min t=1s 3000 3600 2-2.5/18-22 Nm/lb.in. 28 g x Pulse width limited by TVJ IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 VUM 33-05 Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 500 2 V V nA 150 350 A 300 250 IFSM 200 V = 0.8V R RRM VDSS VGS(th) IGSS IDSS RDS(on) RGint gfs VDS td(on) td(off) Ciss Coss Crss Qg RthJS VF IR Boost Diode VGS = 0 V, ID = 2 mA VDS = 20 V, ID = 20 mA VGS = ±20 V, VDS = 0 V VDS = 500 V, VGS = 0 V TVJ = 25°C TVJ = 25°C VDS = 15 V, IDS = 24 A, IDS = 12 A VGS = 0 V 5 ±500 2 0.12 1.5 30 1.5 100 220 8.5 0.9 0.3 350 TVJ= 45°C mA W W S V ns ns nF nF nF 100 50 0 0.001 TVJ= 125°C MOSFET 0.01 t 0.1 s 1 VDS = 250 V, IDS = 12 A, VGS = 10 V Zgen. = 1 W, L-load Fig. 1 Non-repetitive peak surge current (Rectifier Diodes) VDS = 25 V, f = 1 MHz, VGS = 0 V VDS = 250 V, ID = 12 A, IF VR VR = 33 A; TVJ = 25°C TVJ = 150°C VGS = 10 V 500 A2s 400 nC 0.21 K/W 1.75 1.5 1.5 0.25 7 V V mA mA mA I2t 300 TVJ= 45°C 200 TVJ= 125°C = 600 V, TVJ = 25°C = 480 V, TVJ = 25°C TVJ = 125°C 100 VT0 rT IRM RthJS VF For power-loss calculations only TVJ = 125°C IF VR = 30 A; -diF/dt = 240 A/ms = 350 V, TVJ = 100°C 10 1.21 V 9 mW 0 1 t ms 10 11 A Fig. 2 I2t for fusing (Rectifier Diodes) 1.1 K/W IF Rectifier Diodes = 20 A, TVJ = 25°C TVJ = 125°C 1.5 1.5 0.25 2 V V mA mA Dimensions in mm (1 mm = 0.0394") IR VT0 rT RthJS VR VR = 800 V TVJ = 25°C = 640 V, TVJ = 125°C For power-loss calculations only TVJ = 125°C 1.18 V 12 mW 1.3 K/W © 2000 IXYS All rights reserved 2-4 VUM 33-05 80 A 70 60 ID 50 40 30 20 10 0 0 2 4 VDS 6 10 V 7V 6V 80 A 70 60 ID 50 40 TVJ = 25°C TVJ = 125°C 2.5 RDS(on) ID=18A 2.0 norm. 1.5 VGS= 5 V 30 20 1.0 0.5 10 0 8 V 10 2 3 4 VGS 5 6 V7 0.0 -50 0 TVJ 50 100 °C 150 Fig. 3 Typ. output characteristic ID = f (VDS) (MOSFET) 1.4 BVDSS VGS(th) 1.2 VGS(th) VDSS Fig. 4 Typ. transfer characteristics ID = f (VGS) (MOSFET) 12 V 10 8 VDS= 250 V ID = 18 A IG = 10 mA 6 Fig. 5 Typ. normalized RDS(on) = f (TVJ) (MOSFET) 100 nF 10 C Ciss 1.0 norm. 0.8 VGS Coss 4 1 0.6 2 0 0 100 200 Qg 300 nC 400 0.1 0 5 10 VDS 15 Crss 0.4 -50 0 TVJ 50 100 °C 150 V 20 Fig. 6 Typ. normalized BVDSS = f (TVJ) VGS(th) = f (TVJ) (MOSFET) 80 s 60 gfs Fig. 7 Typ. turn-on gate charge characteristics, VGS = f (Qg) (MOSFET) 120 A 100 80 IF 60 40 Fig. 8 Typ. capacitances C = f (VDS), f = 1 MHz (MOSFET) 3.0 µC 2.5 Qrr 2.0 1.5 1.0 0.5 typ. 0.0 10 TVJ=100°C VR= 350 V max. TVJ=150°C TVJ=100°C TVJ= 25°C IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A 40 20 20 0 0 20 40 60 ID 80 A 100 0 0.5 1.0 1.5 VF 2.0 V 2.5 100 -diF/dt A/ms 1000 Fig. 9 Typ. transconductance, gfs = f (ID) (MOSFET) Fig. 10 Forward current versus voltage drop (Boost Diode) Fig. 11 Recovery charge versus -diF/dt (Boost Diode) © 2000 IXYS All rights reserved 3-4 VUM 33-05 40 A 30 IF = 37 A IF = 74 A 20 IF = 37 A IF = 18.5 A 0.8 0.2 10 0.6 typ. 0 0 100 200 0.4 20 Qr 0.1 typ. 300 400 A/ms 600 500 -diF/dt 40 60 °C 80 100 120 140 160 TVJ 0.0 0 100 200 300 400 -diF/dt 1.4 max. 1.2 IRM Kt 1.0 IRM 0.3 trr 0.4 max. IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A 0.6 TVJ=100°C VR= 350 V µs 0.5 TVJ=100°C VR= 350 V A/m 500 s 600 Fig. 12 Peak reverse current versus -diF/dt (Boost Diode) Fig. 13 Dynamic parameters versus junction temperature (Boost Diode) Fig. 14 Recovery time versus -diF/dt (Boost Diode) 18 V 16 VFR 14 12 10 8 6 tFR 4 2 0 100 200 300 400 A/ms 600 500 diF/dt VFR 12 kW 10 Pout 8 TS =85°C Vin = 230 V/50 Hz 10 kW 8 Pout 6 TS =85°C fc = 40 kHz 6 4 4 2 0 0 20 40 60 80 fc kHz 100 120 Vin = 115 V/60 Hz 2 fc = 80 kHz 0 0 50 100 150 Vin (RMS) 200 V 250 Fig. 15 Peak forward voltage versus -diF/dt (Boost Diode) 9 kW fc = 80 kHz Vin = 230 V/50 Hz Fig. 16 Output power versus carrier frequency (Module) 1.5 K/W 1.2 ZthJC 0.9 VUM 33 Fig. 17 Output power versus mains voltage 8 7 Pout 6 Rectifier Diodes Boost Diode 5 4 3 2 1 0 40 60 80 TS Vin = 115 V/60 Hz 0.6 0.3 MOSFET 100 °C 120 0.0 0.01 0.1 1 t s 10 Fig. 18 Output power versus heatsink temperature (Module) Fig. 19 Transient thermal impedance junction to case for all devices © 2000 IXYS All rights reserved 4-4