VUO122-16NO7

VUO122-16NO7 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 125 A I FSM = 1000 A 3~ Rectifier Bridge Part number VUO122-16NO7 PS18 D1 D3 D5 D2 D4 D6 A1 L9 K10 EG1 Features / Advantages: Applications: Package: ECO-PAC2 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 9 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO122-16NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 100 µA TVJ = 150°C 2 mA IF = TVJ = 25°C 1.13 V 1.47 V 1.05 V IF = 50 A TVJ = 125 °C 50 A I F = 150 A TC = 115 °C bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.49 V T VJ = 150 °C 125 A TVJ = 150 °C 0.80 V 4.6 mΩ d=⅓ for power loss calculation only Ptot V VR = 1600 V I F = 150 A I DAV max. Unit 1700 V 0.6 K/W 0.3 K/W TC = 25°C 205 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.08 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 850 A t = 8,3 ms; (60 Hz), sine VR = 0 V 920 A t = 10 ms; (50 Hz), sine TVJ = 45°C 5.00 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 4.85 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 3.62 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 3.52 kA²s 35 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220b VUO122-16NO7 Package Ratings ECO-PAC2 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 24 Weight MD 1.4 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL isolation voltage Logo Nm 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Circuit Diagram Part Number Ordering Standard Ordering Number VUO122-16NO7 Equivalent Circuits for Simulation V0 2 Lot# yywwZ 123456 XXX XX-XXXXX Date Code/Location g terminal to terminal t = 1 second t = 1 minute I typ. R0 Marking on Product VUO122-16NO7 * on die level Delivery Mode Box Code No. 494453 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 3.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO122-16NO7 Outlines ECO-PAC2 10.95 ±0.2 1.55 ±0.2 1.55 ±0.2 9.4 ±0.2 3.3 ±0.2 5.7 ±0.2 E G I K D F H J 13 14 15 4 5 6 M 4 5° O R T W 25 ±0.2 10 11 12 31.6 ±0.1 15.8 ±0.2 4.3 Ø C B ±0 .2 34.3 ±0.2 A 1 2 3 12 ±0.2 2x M4 3.3 ±0.2 1.55 ±0.2 16 17 18 7 8 9 L N P S V X 2 8 1 8.3 35.7° 20.3 ±0.2 1.5 43 51 ±0.2 PS18 D1 D3 D5 D2 D4 D6 A1 L9 K10 EG1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO122-16NO7 Rectifier 800 200 160 I 2t IFSM 4000 TVJ = 45°C [A] 80 TVJ = TVJ = 45°C 2 [A s] 600 [A] VR = 0 V 5000 700 IF 120 6000 50 Hz 0.8 x V RRM 3000 TVJ = 150°C 500 TVJ = 150°C 40 125°C 2000 150°C TVJ = 25°C 0 0.4 0.8 1.2 1.6 400 10-3 2.0 10-2 10-1 100 1000 1 10 t [ms] t [s] VF [V] 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current vs. voltage drop per diode Fig. 3 I t vs. time per diode 60 DC = 50 40 Ptot 30 160 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 1 0.6 KW 0.5 0.8 KW [W] 1 KW 2 KW 4 KW 8 KW 0.4 120 0.33 0.17 IF(AV)M 0.08 80 [A] 20 40 10 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 0 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.7 0.6 Constants for ZthJC calculation: 0.5 ZthJC 0.4 [K/W] 0.3 0.2 i Rth (K/W) ti (s) 1 0.08 0.012 2 0.04 0.007 3 0.29 0.036 4 0.19 0.102 0.1 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b