VUO16-14NO1

VUO 16 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 16-08NO1 VUO 16-12NO1 VUO 16-14NO1 VUO 16-16NO1 VUO 16-18NO1 Conditions IdAV IdAV IdAVM TC = 90°C, module TA = 45°C (RthKA = 0.5 K/W), module module IFSM TVJ = 45°C; VR = 0 I2t 1/2 Type Symbol IdAV = 20 A VRRM = 800-1800 V 1 5 4 2 ~ 10 8 6 6 8 10 4/5 Maximum Ratings Features 15 20 20 A A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 100 106 A A • Package with DCB ceramic base plate • Isolation voltage 3600 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 85 90 A A Applications TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 50 47 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 36 33 A2s A2s -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ 2 - 2.5 18 - 22 Nm lb.in. 35 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25°C TVJ = TVJM 0.3 5.0 mA mA VF IF = 7 A TVJ = 25°C 1.15 V VT0 rt For power-loss calculations only 0.8 50 V mW RthJH per diode, 120° rect. per module, 120° rect. 4.5 0.75 K/W K/W dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with one screw • Space and weight savings • Improved temperature & power cycling Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100503a 1-3 VUO 16 Dimensions in mm (1 mm = 0.0394“) Marking on Product IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100503a 2-3 VUO 16 IF 30 100 A A IFSM 25 100 50 Hz 0.8 x V RRM A 2s 2d I t 80 T VJ = 25°C T VJ = 130°C 20 T VJ = 45°C 60 ma x. 15 40 typ. 10 T VJ = 130°C 20 5 0 0.0 0.5 1.0 0 10 -3 2.0 V 2.5 VF 1.5 Fig. 1 Forward current versus voltage drop per diode 10 -2 10 -1 s 10 10 0 t 1 R thKA K/W 70 IdAVM 0.5 1 1.5 2 3 4 6 60 50 10 Fig. 3 I2t versus time (1-10 ms) per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 80 P tot W ms t 25 A 20 15 40 10 30 20 5 10 0 0 5 10 15 20 25 A 0 25 50 75 10 0 12 5 °C 150 IdAVM 0 0 25 50 75 10 0 12 5 °C 150 TK TA Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature 5 Zth JK K/W 4 Zth JK 3 Constants for ZthJC calculation: 2 i 1 2 3 4 1 0 10 -3 10 -2 10 -1 10 0 10 1 s t Rthi (K/W) 0.005 0.1 1.835 2.55 ti (s) 0.008 0.02 0.05 0.4 10 2 Fig. 6 Transient thermal impedance per diode IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100503a 3-3