VUO190-12NO7

VUO190-12NO7 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 240 A I FSM = 2800 A 3~ Rectifier Bridge Part number VUO190-12NO7 A+ D1 D3 D5 D2 D4 D6 E~ D~ C~ B- Features / Advantages: Applications: Package: PWS-E ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO190-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current VR = 1200 V TVJ = 25°C 200 µA VR = 1200 V TVJ = 150°C 3.5 mA IF = TVJ = 25°C 1.07 V 1.36 V 0.96 V VF forward voltage drop 80 A min. typ. I F = 240 A IF = TVJ = 125 °C 80 A I F = 240 A I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 110 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V 1.33 V T VJ = 150 °C 240 A TVJ = 150 °C 0.74 V 2.4 mΩ d=⅓ for power loss calculation only Ptot max. Unit 1300 V 0.4 K/W 0.15 K/W TC = 25°C 310 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.38 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 39.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 38.1 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 28.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 27.5 kA²s 133 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220b VUO190-12NO7 Package Ratings PWS-E Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 250 Unit A -40 150 °C -40 125 °C 125 °C 284 Weight g MD mounting torque 4.25 5.75 Nm MT terminal torque 4.25 5.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Logo UL Product Number 26.0 mm 3000 V 2500 V XXXX-XXXX yywwZ 1234 Ordering Standard Location Lot# Ordering Number VUO190-12NO7 Equivalent Circuits for Simulation V0 mm Circuit Diagram Date Code I 50/60 Hz, RMS; IISOL ≤ 1 mA 12.0 R0 Marking on Product VUO190-12NO7 * on die level Delivery Mode Box Code No. 462497 T VJ = 150°C Rectifier V 0 max threshold voltage 0.74 V R0 max slope resistance * 1.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 5 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO190-12NO7 Outlines PWS-E 3 30 7 M6x12 94 80 72 26 54 27 6.5 C ~ D ~ E ~ B - A + 3 4 2 5 1 6 12 6.5 15 26 7 25 66 M6 A+ D1 D3 D5 D2 D4 D6 E~ D~ C~ B- IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b VUO190-12NO7 Rectifier 105 2500 240 50 Hz 0.8 x V RRM 50Hz, 80% VRRM 200 TVJ= 45°C 2000 160 2 IFSM It 120 IF TVJ = 45°C [A] 2 [A s] 1500 80 [A] TVJ= 150°C 104 TVJ = 150°C TVJ = 150°C 40 TVJ = 125°C TVJ = 25°C 0 0.5 1.0 1000 0.001 1.5 103 0.01 0.1 1 2 1 3 4 5 6 7 89 t [ms] VF [V] t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 2 Fig. 3 I t vs. time per diode 100 280 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 240 200 IdAV [A] 40 [W] DC = 1 0.5 0.4 0.33 0.17 0.08 160 120 80 20 40 0 0 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 TC [°C] Tamb [°C] IdAVM [A] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1 0.1 ZthJC [K/W] 0.01 0.001 1 10 100 1000 10000 Ri 0.050 ti 0.02 0.003 0.01 0.100 0.225 0.177 0.8 0.070 0.58 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b