VUO190-18NO7

VUO 190 Three Phase Rectifier Bridge IdAV = 248 A VRRM = 800-1800 V VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ ~ ~ + ~ ~ ~ VUO 190-08NO7 VUO 190-12NO7 VUO 190-14NO7 VUO 190-16NO7 VUO 190-18NO7* – + Maximum Ratings 248 165 2800 3300 2500 2750 39 200 45 000 31 200 31 300 -40...+150 150 -40...+125 A A A A A A A2s A2 s As A2 s °C °C °C V~ V~ Nm Nm g 2 * delivery time on request Symbol IdAV IdAV IFSM Test Conditions TC = 100°C, module TA = 35°C (RthCA = 0.2 K/W), module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E72873 q q q q q q Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q 2500 3000 5 ± 15 % 5 ± 15 % 270 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Mounting torque (M6) Terminal connection torque (M6) typ. Test Conditions VR = VRRM; VR = VRRM; IF = 300 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Dimensions in mm (1 mm = 0.0394") M6x10 Characteristic Values ≤ ≤ ≤ 0.3 5 1.43 0.8 2.2 0.45 0.075 0.6 0.1 10 9.4 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s2 15 7 For power-loss calculations only per diode, 120° per module per diode, 120° per module Creeping distance on surface Creepage distance in air Max. allowable acceleration 94 80 72 26 26 54 27 6.5 A+ B- 12 25 66 © 2000 IXYS All rights reserved 1-2 049 Data according to IEC 60747 and refer to a single diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 6.5 C~ D~ E~ 3 30 VUO 190 300 A 250 IF 200 IFSM 2000 3000 A 2500 I2t 50Hz, 80% VRRM 105 A2s VR = 0 V TVJ = 45°C TVJ = 45°C 150 1500 100 1000 TVJ=150°C TVJ= 25°C 50 500 TVJ = 150°C TVJ = 150°C 0 0.0 0.5 1.0 VF V 1.5 0 0.001 0.01 0.1 t s 1 104 1 2 3 4 5 6 7 ms10 89 t Fig. 4 Forward current versus voltage drop per diode 600 W Ptot 400 Fig. 5 Surge overload current Fig. 6 I2t versus time per diode 280 A RthHA : 0.1 K/W 0.2 K/W 0.5 K/W 1.0 K/W 1.5 K/W 2.0 K/W 3.0 K/W 240 Id(AV)M 200 160 120 80 40 200 0 0 40 80 120 160 200 Id(AV)M 240 A 0 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TC Fig. 7 Power dissipation versus direct output current and ambient temperature 0.5 K/W 0.4 ZthJC Fig. 8 Max. forward current versus case temperature 0.3 Constants for ZthJC calculation: 0.2 i 1 2 3 4 VUO 190 Rthi (K/W) 0.013 0.072 0.175 0.19 ti (s) 0.0012 0.047 0.326 2.03 0.1 0.0 0.001 0.01 0.1 1 t 10 s Fig. 9 Transient thermal impedance junction to case © 2000 IXYS All rights reserved 2-2