VUO25-12NO8

VUO 25 Three Phase Rectifier Bridge VRSM VDSM VRRM VDRM V 900 1300 1500 1700 1900 V 800 1200 1400 1600 1800 ­­- + Type ~ ~ ~ VUO 25-08NO8 VUO 25-12NO8 VUO 25-14NO8 VUO 25-16NO8 VUO 25-18NO8 Conditions IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C; VR = 0 ~ - Maximum Ratings Features • Package with ¼" fast-on terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 380 400 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 360 400 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 725 750 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 650 650 As A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ • Easy to mount with one screw • Space and weight savings • Improved temperature & power cycling 2 ±10% 18 ±10% Nm lb.in. Dimensions in mm (1 mm = 0.0394“) 22 g 2 VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25°C TVJ = TVJM 0.3 5.0 mA mA VF IF = 150 A TVJ = 25°C 2.2 V VT0 rt For power-loss calculations only 0.85 12 V mW RthJC per diode; 120° el. per module per diode; 120° el. per module 9.30 1.55 10.20 1.70 K/W K/W K/W K/W 12.7 9.4 50 mm mm m/s2 dS dA a + 20 25 TVJ TVJM Tstg RthJH ~ ~ Symbol I2t IdAV = 25 A VRRM = 800-1800 V Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages 6.3 x 0.8 Characteristic Values Creeping distance on surface Creepage distance in air Max. allowable acceleration D B E A Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100303a 1-2 VUO 25 Fig. 1 Fig. 4 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Power dissipation versus direct output current and ambient temperature Fig. 3 Fig. 5 I2t versus time (1-10 ms) per diode Maximum forward current at case temperature Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.194 0.556 2.25 6.3 ti (s) 0.024 0.07 5.8 8.5 Constants for ZthJK calculation: i 1 2 3 4 5 Fig. 6 Rthi (K/W) 0.194 0.556 2.25 6.3 0.9 ti (s) 0.024 0.07 5.8 8.5 28 Transient thermal impedance per diode IXYS reserves the right to change limits, test conditions and dimensions. © IXYS All rights reserved 20100303a 2-2