VUO28-12NO7

VUO28-12NO7 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 30 A I FSM = 120 A 3~ Rectifier Bridge Part number VUO28-12NO7 K N H A D Features / Advantages: Applications: Package: ECO-PAC1 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 9 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO28-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1200 V TVJ = 25°C 10 µA TVJ = 150°C 0.7 mA TVJ = 25°C 1.20 V 1.61 V 1.14 V IF = 10 A IF = 30 A IF = 10 A IF = 30 A TVJ = 125 °C 1.68 V T VJ = 150 °C 30 A TVJ = 150 °C 0.84 V 28.8 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 105 °C Ptot min. 2.5 K/W 0.4 K/W TC = 25°C 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20191219b VUO28-12NO7 Package Ratings ECO-PAC1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 19 Weight MD 1.4 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2 Nm terminal to terminal 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code/Location Logo yywwZ 123456 XXX XX-XXXXX Part Number Ordering Standard Circuit Diagram Lot# Ordering Number VUO28-12NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO28-12NO7 * on die level Delivery Mode Box Code No. 479632 T VJ = 150°C Rectifier V 0 max threshold voltage 0.84 V R0 max slope resistance * 27.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO28-12NO7 Outlines ECO-PAC1 K IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved N H A D Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO28-12NO7 Rectifier 100 40 100 50 Hz 0.8 x V RRM VR = 0 V 30 80 2 IF It TVJ = 45°C 20 TVJ = 45°C TVJ = 150°C IFSM [A] [A2s] TVJ = 150°C [A] 60 10 TVJ = 125°C 150°C 0 0.4 TVJ = 25°C 0.8 1.2 1.6 40 10-3 2.0 10-2 10 100 1 t [ms] Fig. 2 Surge overload current vs. time per diode Fig. 3 I2t vs. time per diode 30 40 RthJA: Ptot DC = 0.6 KW DC = 1 0.5 0.4 0.33 0.17 0.08 20 10 t [s] VF [V] Fig. 1 Forward current vs. voltage drop per diode 10-1 1 0.8 KW 30 0.5 1 KW 2 KW 0.4 4 KW 0.33 8 KW IF(AV)M 0.17 20 0.08 [A] [W] 10 10 0 0 0 5 10 15 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 3.0 2.5 Constants for ZthJC calculation: 2.0 ZthJC 1.5 [K/W] 1.0 i Rth (K/W) ti (s) 1 1.359 0.1015 2 0.3286 0.1026 3 0.1651 0.4919 4 0.6473 0.62 0.5 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b