VUO30-08NO3

VUO 30 IdAV = 37 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type + + ~~ ~ ~ ~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* ~ – - E72873 * delivery time on request Symbol Conditions IdAV ① IdAVM ① TC = 85°C, module module IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 37 50 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 330 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 290 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 460 A2s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 355 A2s A2 s -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 50 Nm lb.in. g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM 0.3 5 mA mA VF IF TVJ = 25°C 2.55 V VT0 rT For power-loss calculations only 0.9 11 V mΩ RthJC per diode, DC current per module per diode, DC current per module 2.4 0.4 3.0 0.5 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 Features • Package with DCB ceramic base plate • Isolation voltage 3600 V~ • Planar passivated chips • Blocking voltage up to 1800 V • low forward voltage drop • ¼" fast-on terminals • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Rectifier for DC motors field current Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") RthJH dS dA a = 150 A; Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. ① for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Use output terminals in parallel connection! 20080527a 1-2 VUO 30 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) ti (s) 0.489 0.544 1.376 0.0717 0.1241 0.1214 Fig. 5 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080527a 2-2