VUO34-12NO1

VUO34-12NO1 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 45 A I FSM = 300 A 3~ Rectifier Bridge Part number VUO34-12NO1 Backside: isolated 4/5 6 8 10 1/2 Features / Advantages: Applications: Package: V1-A-Pack ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO34-12NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V TVJ = 25°C 20 µA TVJ = 150°C 1 mA TVJ = 25°C 1.13 V 1.46 V 1.06 V IF = 15 A IF = 45 A IF = 15 A IF = 45 A TVJ = 125 °C 1.48 V T VJ = 150 °C 45 A TVJ = 150 °C 0.81 V 14.9 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 110 °C Ptot min. 1.7 K/W 0.4 K/W TC = 25°C 70 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 11 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191219d VUO34-12NO1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute Date Code 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Prod. Index yywwA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number VUO34-12NO1 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO34-12NO1 * on die level Delivery Mode Blister Code No. 516776 T VJ = 150°C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 13.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 24 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO34-12NO1 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) *7 *0 *7 *14 5,5 *14 Ø 6,1 Ø 2,5 1,5 12,2 11,75 ±0,3 = 11,75 ±0,3 = 1x45° 3 4 5 8 9 10 15 6 2 7 4 1 6 *11 5,5 *0 Ø 2,1 *11 6 0,5 *14 *0 25 *14 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 ±0,3 1 ±0,2 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm   4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 8 10 2 +0,2 1/2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO34-12NO1 Rectifier 280 50 40 IFSM [A] [A] VR = 0 V 400 240 30 IF 50 Hz 0.8 x V RRM 2 It 200 300 TVJ = 45°C 2 TVJ = 45°C [A s] 20 TVJ = 150°C 200 10 TVJ = 150°C 160 TVJ = 125°C 150°C 100 TVJ = 25°C 0 0.4 0.8 1.0 1.2 1.4 120 10-3 1.6 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 20 16 Fig. 3 I2t vs. time per diode DC = 32 0.6 KW 1 0.8 KW 12 10 36 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 1 t [ms] VF [V] 24 Ptot 0.6 28 0.5 1 KW 2 KW 24 0.4 4 KW 0.33 8 KW IF(AV)M 20 [A] 16 0.08 [W] 0.17 12 8 8 4 4 0 0 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 2.0 1.6 ZthJC 1.2 Constants for ZthJC calculation: [K/W] 0.8 0.4 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 1.150 0.1015 2 0.150 0.1026 3 0.100 0.4919 4 0.300 0.6200 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d