VUO35-18NO7

VUO35-18NO7 Phase out 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 35 A I FSM = 400 A 3~ Rectifier Bridge Part number VUO35-18NO7 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: PWS-A ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Easy to mount with two screws ● Base plate: Aluminium internally DCB isolated ● Advanced power cycling Recommended replacement: VUO62-18NO7 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO35-18NO7 Phase out Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.10 V 1.38 V 1.01 V IF = 15 A IF = 45 A IF = 15 A IF = 45 A TVJ = 125 °C 1.38 V T VJ = 150 °C 35 A TVJ = 150 °C 0.80 V 12.9 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1900 V VR = 1800 V rectangular R thCH typ. VR = 1800 V TC = 85 °C Ptot min. 4.2 K/W 0.6 K/W TC = 25°C 29 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191219b VUO35-18NO7 Phase out Package Ratings PWS-A Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 °C -40 125 °C 125 °C 100 Weight g MD mounting torque 1.25 1.75 Nm MT terminal torque 1.25 1.75 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 6.5 mm 8.5 mm 3000 V 2500 V Logo Circuit Diagram UL Product Number XXXX-XXXX yywwZ 1234 Date Code Ordering Standard Location Lot# Ordering Number VUO35-18NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO35-18NO7 * on die level Delivery Mode Box Code No. 456667 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 11.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 20 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO35-18NO7 Phase out 22 5 24 1.1 Outlines PWS-A 7 8 10 27 9 45 ~ ~ ~ 4.3 9 M4 9 6 21 4.8 45 55 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b VUO35-18NO7 Phase out Rectifier 350 60 50 Hz 0.8 x V RRM 800 VR = 0 V 50 300 600 40 TVJ = 45°C 250 30 TVJ = 45°C 400 TVJ = 150°C TVJ = 150°C 20 200 TVJ = 125°C 150°C 10 200 TVJ = 25°C 0 0.4 0.6 0.8 1.0 1.2 1.4 150 10-3 1.6 Fig. 1 Forward current vs. voltage drop per diode 10-2 10-1 1 32 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 10 Fig. 3 I2t vs. time per diode Fig. 2 Surge overload current vs. time per diode 16 12 100 0.6 KW DC = 28 1 0.8 KW 8 1 KW 2 KW 4 KW 8 KW 24 0.5 0.4 20 0.33 0.17 16 0.08 12 4 8 4 0 0 0 4 8 12 0 25 50 75 100 125 150 175 0 Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 25 50 75 100 125 150 Fig. 5 Max. forward current vs. case temperature per diode 5 4 3 Constants for ZthJC calculation: 2 1 0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.194 0.024 2 0.556 0.070 3 0.450 3.250 4 3.000 9.300 100000 Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219b