VUO36-08NO8

VUO36-08NO8 3~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 27 A I FSM = 550 A 3~ Rectifier Bridge Part number VUO36-08NO8 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● ¼“ fast-on terminals ● Easy to mount with one screw Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO36-08NO8 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.04 V 1.23 V 0.93 V IF = 15 A IF = 45 A IF = 15 A IF = 45 A TVJ = 125 °C 1.18 V T VJ = 150 °C 27 A TVJ = 150 °C 0.76 V 9.1 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 900 V VR = 800 V rectangular R thCH typ. VR = 800 V TC = 85 °C Ptot min. 7 K/W 1 K/W TC = 25°C 17 W t = 10 ms; (50 Hz), sine TVJ = 45°C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 470 A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.52 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.48 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.06 kA²s 18 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191219d VUO36-08NO8 Package Ratings FO-B Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 20 Weight MD 1.8 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2.2 Nm terminal to terminal 9.0 7.0 mm terminal to backside 10.0 10.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Logo XXX XX-XXXXX Part Number yywwZ Date Code/Location Ordering Standard Ordering Number VUO36-08NO8 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO36-08NO8 * on die level Delivery Mode Box Code No. 502548 T VJ = 150°C Rectifier V 0 max threshold voltage 0.76 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO36-08NO8 Outlines FO-B 10 ±0.2 22.1 ±0.5 6.3 x 0.8 12 ±0.3 D E 8 ±0.3 12 ±0.3 28.5 ±0.2 C B A 28.5 ±0.2 + D1 D3 D5 D2 D4 D6 ~ ~ ~ - IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d VUO36-08NO8 Rectifier 450 60 50 50 Hz 0.8 x V RRM 1600 VR = 0 V 400 1200 40 IFSM350 IF 30 [A] [A] 300 20 10 400 0.8 200 10-3 1.2 10-2 10-1 Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 10 2 Fig. 3 I t vs. time per diode 24 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 6 1 t [ms] t [s] 10 [W] 100 VF [V] 8 TVJ = 150°C 250 TVJ = 25°C 0 0.4 Ptot 800 [A2s] TVJ = 150°C TVJ = 125°C 150°C TVJ = 45°C 2 It TVJ = 45°C DC = 0.6 KW 20 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 0.5 0.4 16 0.33 IF(AV)M 0.17 12 0.08 [A] 4 8 2 4 0 0 0 2 4 6 8 10 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IF(AV)M [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 8 6 Constants for ZthJC calculation: ZthJC 4 [K/W] 2 0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.040 0.005 2 0.150 0.030 3 1.710 0.400 4 5.100 2.300 100000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219d