VUO36-18NO8

VUO 36 Three Phase Rectifier Bridge IdAVM = 35 A VRRM = 1200-1800 V VRSM V 600 1200 1400 1600 1800 VRRM V 600 1200 1400 1600 1800 Type VUO 36-06NO8 VUO 36-12NO8 VUO 36-14NO8 VUO 36-16NO8 VUO 36-18NO8 ~ ~ ~ + ~ ~ - – + ~ Symbol IdAV IdAVM IFSM Test Conditions TC = 85°C, module TC = 62°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 27 35 550 600 500 550 1520 1520 1250 1250 -40...+150 150 -40...+150 A A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g Features q q q q q q Package with ¼" fast-on terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications q q q q TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors 2500 3000 2 ± 10 % 18 ± 10 % 22 Advantages q q q Easy to mount with one screw Space and weight savings Improved temperature and power cycling Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = 25°C; TVJ = TVJM; IF = 150 A; VR = VRRM VR = VRRM TVJ = 25°C Characteristic Values £ £ £ 0.3 2.0 1.7 0.8 7.4 7.5 1.25 8.4 1.4 12.7 9.4 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Dimensions in mm (1 mm = 0.0394") For power-loss calculations only per diode; DC current per module per diode; DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 36 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 I2t versus time (1-10 ms) per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.183 0.528 1.89 4.9 ti (s) 0.032 0.085 5.9 8.3 Constants for ZthJK calculation: i 1 2 3 4 5 Rthi (K/W) 0.183 0.528 1.89 4.9 0.9 ti (s) 0.032 0.085 5.9 8.3 28.0 Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved 2-2