VUO50-16NO3

VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type VUO 50-08NO3 VUO 50-12NO3 VUO 50-14NO3 VUO 50-16NO3 VUO 50-18NO3* + + ~~ ~ ~ ~ ~ – - - * delivery time on request Symbol Test Conditions IdAV ① IdAVM ① TC = 85°C, module module IFSM TVJ = 45°C; VR = 0 Maximum Ratings Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop ¼" fast-on terminals UL registered E 72873 ● I2t 58 75 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 525 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 415 440 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1160 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2 860 810 As A2s -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 50 Nm lb.in. g VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM 0.3 5 mA mA VF IF TVJ = 25°C 1.9 V VT0 rT For power-loss calculations only 0.9 6.0 V mW RthJC per diode, DC current per module per diode, DC current per module 1.62 0.27 2.22 0.37 K/W K/W K/W K/W 10 9.4 50 mm mm m/s2 RthJH dS dA a ● ● ● ● Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Rectifier for DC motors field current ● ● ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. ① for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ● ● TVJ TVJM Tstg = 150 A; ● Use output terminals in parallel connection! 1-2 VUO 50 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 1.21 0.1339 0.2763 0.600 0.1015 0.1026 0.4919 0.620 Fig. 5 Transient thermal impedance junction to heatsink per diode © 2000 IXYS All rights reserved 2-2